Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXFP5N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

114 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.65 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

3 pF

IXFP72N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.019 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

2 pF

IXFR140N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

5000 mJ

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.026 ohm

70 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFT12N100Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.05 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

IXFX160N30T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1390 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.019 ohm

160 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

45 pF

IXTH02N450HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

4500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

625 ohm

.2 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

10

260

IXTH20N50D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

50 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.33 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AA

e3

10

260

IXTH20P50P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2500 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.45 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

IXTH88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTH96P085T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

85 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.013 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

460 pF

IXTK120N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2.5 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.024 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTK32P60P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

3500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.35 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

77 pF

IXTN550N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

940 W

PLASTIC/EPOXY

SWITCHING

55 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1650 A

3000 mJ

550 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

NICKEL

.0013 ohm

550 A

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

AVALANCHE RATED

10

260

UL RECOGNIZED

IXTT75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

350 pF

IXTX110N20L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

275 A

5000 mJ

110 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.024 ohm

110 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

320 pF

IXTX200N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

200 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.011 ohm

200 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

610 pF

LSIC1MO120E0160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.2 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

5 pF

DE275-102N06A

Littelfuse

VERY HIGH FREQUENCY BAND

FET General Purpose Power

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFA34N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.1 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

2 pF

IXFA4N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

200 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

3.3 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXFH120N25X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.012 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

2 pF

IXFH12N90P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.9 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH21N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

.25 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXFH22N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.145 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

1.3 pF

IXFH40N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

860 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.145 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

57 pF

IXFH70N20Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

690 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

100 pF

IXFH76N07-11

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

70 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

304 A

2000 mJ

76 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

360 W

175 Cel

SILICON

MATTE TIN

.011 ohm

76 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFH90N20X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0128 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

4 pF

IXFK150N30P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

375 A

4000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.019 ohm

150 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

40 pF

IXFK180N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1390 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0129 ohm

180 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

47 pF

IXFK200N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

4000 mJ

200 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0075 ohm

200 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFK64N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

2500 mJ

64 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.085 ohm

64 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFK80N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.077 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

5 pF

IXFK94N50P2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

3500 mJ

94 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.055 ohm

94 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFN210N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

300 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

650 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0046 ohm

210 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

7.7 pF

UL RECOGNIZED

IXFN300N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1070 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

900 A

3000 mJ

295 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.0055 ohm

295 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFN32N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

690 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1500 mJ

27 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.32 ohm

27 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFN340N07

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

70 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1360 A

4000 mJ

340 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.004 ohm

340 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN44N80Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 W

UNSPECIFIED

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

130 A

3500 mJ

37 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

37 A

UPPER

R-XUFM-X4

ISOLATED

AVALANCHE RATED

UL RECOGNIZED

IXFP20N50P3M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

58 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.3 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

8.3 pF

IXFR200N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

4000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.009 ohm

133 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFR80N60P3

Littelfuse

N-CHANNEL

SINGLE

NO

540 W

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN SILVER COPPER

48 A

e1

10

260

IXFT340N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

935 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

850 A

960 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0032 ohm

340 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

490 pF

IXFX24N100Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.44 ohm

24 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

50 pF

IXFY26N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.066 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

10

260

1 pF

IXFY30N25X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

300 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

10

260

1 pF

IXKR40N60C

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1800 mJ

38 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.7 ohm

38 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.