Littelfuse Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFH340N075T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	935 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	850 A	960 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0032 ohm	340 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	490 pF
IXFH6N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	700 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFK120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.024 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	5.5 pF
IXFN140N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	UNSPECIFIED	SWITCHING	300 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	300 A	5000 mJ	110 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.024 ohm	110 A	UPPER	R-XUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN150N65X2	Littelfuse
IXFN180N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ	180 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.008 ohm	180 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN24N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3000 mJ	24 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.39 ohm	24 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFT86N30T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	860 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	190 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.046 ohm	86 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	22 pF
IXTT1N300P3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	195 W	PLASTIC/EPOXY		3000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.6 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			50 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN			TO-268AA				17 pF
IXTX4N300P3HV	Littelfuse
IXFB210N30P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	550 A	4000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0145 ohm	210 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					42 pF
IXFH13N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON				MATTE TIN	.8 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH4N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	700 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFK120N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	714 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2000 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.022 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260	265 pF
IXFN73N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	300 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	292 A		73 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	520 W	150 Cel	SILICON				NICKEL	.045 ohm	73 A	UPPER	R-PUFM-X4		DRAIN	Not Qualified	AVALANCHE RATED
IXFN80N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	SWITCHING	600 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	200 A	2000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.077 ohm	66 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					5 pF	UL RECOGNIZED
IXFP5N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	300 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	2.8 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e1
IXFT14N80P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.72 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFV26N50PS	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	78 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.23 ohm	26 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
IXFV74N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1000 mJ	74 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.034 ohm	74 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTH12N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY		1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	750 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.2 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	80 pF
IXTH13N110	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	PLASTIC/EPOXY	SWITCHING	1100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	360 W	150 Cel	SILICON				MATTE TIN	.92 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3
IXTH2N170D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	568 W	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	6.5 ohm		SINGLE	R-PSFM-T3		DRAIN			TO-247AD	e3	10	260	80 pF
IXTH4N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	350 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXTP02N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	.6 A	40 mJ	.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Silver/Copper (Sn/Ag/Cu)	.075 ohm	.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e1	NOT SPECIFIED	NOT SPECIFIED
IXTP140P05T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	420 A	1000 mJ	140 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.009 ohm	140 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				640 pF
IXTP1N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			11 ohm	1.5 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
IXTP26P20P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	1500 mJ	26 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.17 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB	e3			100 pF
IXTT16N20D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	695 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	176 ns	-55 Cel	405 ns	MATTE TIN	.08 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-268AA	e3	10	260	607 pF
IXTX90N25L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	AMPLIFIER	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.036 ohm	90 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					360 pF
IXTY1R6N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.3 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	16.5 pF
IXFA22N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	390 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	1000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.145 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	1.3 pF
IXFH6N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	180 W	150 Cel	SILICON				MATTE TIN	2 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH75N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON				MATTE TIN	.02 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH75N10Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	1500 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.02 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3
IXFK170N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	680 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.01 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN			TO-264AA				1200 pF
IXFN120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	650 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.024 ohm	108 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					5.5 pF	UL RECOGNIZED
IXFN44N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	176 A	4000 mJ	44 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.165 ohm	44 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN90N85X	Littelfuse
IXFR140N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	4000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.022 ohm	90 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR230N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	630 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.008 ohm	156 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED		e1	10	260	60 pF	UL RECOGNIZED
IXTA02N250HVTRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		2500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A		.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	450 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	3 pF
IXTA1R4N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	86 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	150 mJ	1.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	13 ohm	1.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
IXTA26P20P-TRL	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.17 ohm	26 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	100 pF
IXTA3N100D2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	6 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	17 pF
IXTH10N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1.5 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AD	e3	10	260	70 pF
IXTH16P60P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	2500 mJ	16 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.72 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	60 pF
IXTH30N60L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	PLASTIC/EPOXY	AMPLIFIER	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	2000 mJ	30 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.24 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	130 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.