Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXFN220N20X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

2500 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0062 ohm

160 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

9 pF

UL RECOGNIZED

IXFN66N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

850 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

140 A

2500 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

65 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

142 pF

UL RECOGNIZED

IXFP22N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.145 ohm

22 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1.3 pF

IXFQ94N30P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

235 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.036 ohm

94 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

25 pF

IXFR26N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

65 A

1000 mJ

15 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.43 ohm

15 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFR44N50Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

2500 mJ

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.12 ohm

34 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

IXFR44N50Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.154 ohm

25 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

56 pF

UL RECOGNIZED

IXFR44N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3400 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.2 ohm

25 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

IXFT32N100XHV

Littelfuse

IXFV12N120PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

543 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

500 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.35 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFX180N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

720 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.008 ohm

180 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

1940 pF

IXFX21N100Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

2500 mJ

21 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.5 ohm

21 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFX32N100Q3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

2000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.32 ohm

32 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

67 pF

IXFX360N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

900 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0029 ohm

360 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

400 pF

IXFX94N50P2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

3500 mJ

94 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

.055 ohm

94 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

NOT SPECIFIED

NOT SPECIFIED

IXFZ520N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1560 A

3000 mJ

465 A

6

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0013 ohm

465 A

DUAL

R-PDFP-F6

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTA08N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

25 ohm

.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTA08N50D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

4.6 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

10

260

11 pF

IXTA14N60P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

900 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.55 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTA1N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

100 mJ

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

20 ohm

1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTA200N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

500 A

600 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0042 ohm

200 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

228 pF

IXTA2R4N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

2.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

7.5 ohm

2.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTA90N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

400 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.01 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTF02N450

Littelfuse

N-CHANNEL

SINGLE

NO

78 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

IXTH110N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

694 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

110 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.024 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTH11P50

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1000 mJ

11 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

187 pF

IXTH120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

65 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

505 pF

IXTH240N15X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

940 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0044 ohm

240 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

6 pF

IXTH3N150

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

250 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

7.3 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

30 pF

IXTH60N20X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

350 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.021 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

.95 pF

IXTH75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

350 pF

IXTK40P50P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.23 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

93 pF

IXTK90P20P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

270 A

3500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.044 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

250 pF

IXTN170P10P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

510 A

3500 mJ

170 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.012 ohm

170 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXTN240N075L2

Littelfuse

IXTN600N04T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

940 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1800 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

NICKEL

.0013 ohm

600 A

UPPER

R-PUFM-X4

1

ISOLATED

AVALANCHE RATED

10

260

1470 pF

IXTP130N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0091 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

95 pF

IXTP18P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.12 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

80 pF

IXTP36N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.11 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTP3N50D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.5 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

24 pF

IXTP80N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

105 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.014 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

90 pF

IXTQ88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTQ96N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTT16N50D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

695 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

223 ns

-55 Cel

423 ns

MATTE TIN

.3 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

130 pF

IXTT20N50D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

400 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

50 A

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.33 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-268AA

e3

10

260

IXTX22N100L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.6 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

100 pF

IXTX240N075L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

AMPLIFIER

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

720 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.007 ohm

240 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

1470 pF

IXTX600N04T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1600 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0015 ohm

600 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

1470 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.