Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTU01N100D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

.4 A

.4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

1.1 W

150 Cel

SILICON

-55 Cel

80 ohm

.4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

VUM33-05

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

130 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

SILVER

.12 ohm

47 A

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

IXTL450

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

IXTQ32P20T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

105 pF

IXFD6N100F-5F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

1000 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD6N100Q-5U

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

1000 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ120N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.022 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTD67N10-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 ohm

UPPER

R-XUUC-N3

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXTS13N50

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

IXFP05N100M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

100 mJ

.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

17 ohm

.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e1

IXTQ60N20L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

255 pF

IXTD42N25P-5S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

250 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT48P20P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

462 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

144 A

2500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.085 ohm

48 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

170 pF

IXTD6N90-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

900 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

1.8 ohm

UPPER

R-XUUC-N5

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFD70N15-7X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.032 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD23N80Q-82

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

800 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.44 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD10N100-7Y

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

1000 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD13N90Q-7Q

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

900 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

8

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.9 ohm

UPPER

R-XUUC-N8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ24N55Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.27 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e3

GMM3X60-015X1-SMD

Littelfuse

1

57 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

57 A

IXFL14N60

Littelfuse

N-CHANNEL

SINGLE

NO

175 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IXKC40N60C

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

690 mJ

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.096 ohm

24 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e1

IXFP44N25X3M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.04 ohm

44 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1 pF

IXTE22C20X4U

Littelfuse

125 W

4

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

22 A

e0

IXFP8N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

250 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.45 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

2.2 pF

IXFP12N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.31 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1 pF

IXTS11N60

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

FMM151-0075P

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

5

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0062 ohm

150 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

IXFP4N100QM

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

46 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

700 mJ

2.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

3 ohm

2.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

IXTT82N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

82 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTQ42N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.084 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFQ50N50P3

Littelfuse

IXFL44N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.13 ohm

41 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

IXTD120N20P-8S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.028 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFM11N100

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

IXFD55N50F-9F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

500 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD15N80-7X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

800 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.7 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTD2N80-2L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

800 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

6.5 ohm

UPPER

R-XUUC-N2

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

MTI200WX75GD

Littelfuse

2N7100

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

IXTX17N120L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.9 ohm

17 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

90 pF

IXFD32N50-8X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

500 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFQ80N25X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.016 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

1.6 pF

IXFP26N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

78 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.25 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

8 pF

IXTX46N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.16 ohm

46 A

SINGLE

R-PSIP-T3

DRAIN

170 pF

IXKH24N60C5

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

522 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.165 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

IXFQ30N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

.2 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

IXTD11N80-7L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

800 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.95 ohm

UPPER

R-XUUC-N7

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.