Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXFV30N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFM11N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

METAL

SWITCHING

800 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

44 A

11 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.95 ohm

11 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204

NOT SPECIFIED

NOT SPECIFIED

IXFV36N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1500 mJ

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.17 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFC20N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.5 ohm

11 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

28 pF

UL RECOGNIZED

IXTV22N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

350 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

750 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.27 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV22N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.35 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV22N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

750 mJ

22 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.27 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTQ160N075T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

430 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.006 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXYH120N65A5

Littelfuse

IXFM10N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

METAL

SWITCHING

1000 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

40 A

10 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

1.2 ohm

10 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204AA

NOT SPECIFIED

NOT SPECIFIED

IXTU5N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

89 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

250 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.4 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-251

NOT SPECIFIED

NOT SPECIFIED

IXTV30N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFP8N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.8 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

4 pF

IXFV12N100PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

463 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

750 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.05 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV26N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

78 A

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.23 ohm

26 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV30N60PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTQ182N055T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

490 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.005 ohm

182 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTV22N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

750 mJ

22 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.27 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFM6N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

METAL

SWITCHING

1000 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

24 A

6 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

180 W

150 Cel

SILICON

2 ohm

6 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204

NOT SPECIFIED

NOT SPECIFIED

IXFM13N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

METAL

SWITCHING

800 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

52 A

13 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.8 ohm

13 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204

NOT SPECIFIED

NOT SPECIFIED

IXTU1R4N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2.1 A

75 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

9 ohm

1.4 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-251

2.4 pF

IXFV15N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

543 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

500 mJ

15 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.76 ohm

15 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV36N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1500 mJ

36 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFM6N90

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

METAL

SWITCHING

900 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

24 A

6 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

180 W

150 Cel

SILICON

MATTE TIN

1.8 ohm

6 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204

e3

IXFM15N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

METAL

SWITCHING

600 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

60 A

15 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.05 ohm

15 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IXFV20N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.52 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV14N80PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.72 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTV36N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV18N90PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

800 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFM12N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

METAL

SWITCHING

1000 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

48 A

12 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

1.05 ohm

12 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

AVALANCHE RATED

TO-204AA

NOT SPECIFIED

NOT SPECIFIED

IXFV20N80PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV12N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

463 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

750 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.05 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTQ50N28T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

PLASTIC/EPOXY

280 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.066 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

24 pF

IXTV30N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.24 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTV30N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.2 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

XTA30N25L2

Littelfuse

IXFV30N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.24 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV15N100PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

543 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

500 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.76 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV22N50PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

350 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

750 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.27 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFP34N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

2.6 pF

IXTV22N60PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

66 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.35 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTV22N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.35 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFV12N90P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.9 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXTV18N60PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

54 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.42 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFV12N90PS

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTV18N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

1000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.42 ohm

18 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFC36N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.19 ohm

19 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXFC30N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.25 ohm

15 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.