Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTL9N40

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

FDM15-06KC5

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

522 mJ

5

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.165 ohm

15 A

SINGLE

R-PSIP-T5

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

IXFP230N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

700 A

850 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0042 ohm

230 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

125 pF

IXTL24N10

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

24 A

e0

IXFL30N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

18 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

18 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXFL60N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.15 ohm

40 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXFL38N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2000 mJ

29 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

29 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTQ130N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.012 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

320 pF

IXTX24N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

568 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.4 ohm

24 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

315 pF

IXTZ42N20MB

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

MKG40RK600LB-TRR

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1900 mJ

54 A

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.041 ohm

54 A

DUAL

R-PDSO-G9

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IXFZ67N10

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

67 A

VKM40-06P1

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

1800 mJ

38 A

6

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

38 A

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTL15N20

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTQ32N65X

Littelfuse

IXTR140P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.011 ohm

110 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

700 pF

UL RECOGNIZED

FMK75-01F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

75 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.025 ohm

75 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

UL RECOGNIZED

IXTQ75N15

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.023 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e3

IXFD36N55Q2-84

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

550 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.18 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT30N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.24 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTR210P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

800 A

3000 mJ

158 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.008 ohm

158 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFL350

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IXTR90P10P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.027 ohm

57 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

510 pF

UL RECOGNIZED

IXTQ26P20P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

1500 mJ

26 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.17 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

100 pF

MTC120WX55GD-SMD

Littelfuse

NOT SPECIFIED

NOT SPECIFIED

IXTZ27N40MA

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

IXTT440N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1000 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1200 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

440 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

645 pF

FMM50-025TF

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

130 A

400 mJ

30 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.05 ohm

30 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXTT21N50Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

1.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXTQ470P2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

126 A

1300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.145 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

44 pF

IXTL2N470

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

PLASTIC/EPOXY

SWITCHING

4700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

20 ohm

2 A

SINGLE

R-PSIP-T3

ISOLATED

105 pF

VMD600-007S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1350 W

UNSPECIFIED

SWITCHING

70 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

2480 A

620 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0021 ohm

620 A

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD21N100Q-8Y

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

1000 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.52 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXLZ11N100

Littelfuse

N-CHANNEL

SINGLE

NO

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

IXTQ22N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

750 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.27 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFY5N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.65 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

10

260

3 pF

C-IRFC250

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.085 ohm

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT40N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

AMPLIFIER

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2000 mJ

40 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.17 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

IXTI90N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

300 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0084 ohm

90 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-262AA

102 pF

IXTQ110N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFP12N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

600 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTQ36N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.11 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

FMM22-05PF

Littelfuse

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

NO

132 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

55 A

750 mJ

13 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.27 ohm

13 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXFM19N50

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

19 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

19 A

e0

IXFY4N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

850 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0025 ohm

3.5 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

10

260

5 pF

IXTS01N90P-223

Littelfuse

IXTQ96N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.029 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

75 pF

IXFD150N085-9X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

85 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.007 ohm

UPPER

R-XUUC-N9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.