Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTR48P20P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

2500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.093 ohm

30 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

170 pF

UL RECOGNIZED

GMM3X60-015X1

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.022 ohm

57 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFP76N15T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.022 ohm

76 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

85 pF

IXTD10N100-7L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1000 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

UPPER

R-XUUC-N7

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXTD140N20P-88

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.024 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MCB60I1200TZ-TUB

Littelfuse

IXFP24N60X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.175 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

18 pF

IXTL6N60

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

GWM100-0085X1-SMD

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

85 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

103 A

17

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0062 ohm

103 A

DUAL

R-PDSO-G17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFZ35N30

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 A

IXFL132N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.043 ohm

63 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

12 pF

IXTD24P20-7B

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MTC120W55GC-SMD

Littelfuse

NOT SPECIFIED

NOT SPECIFIED

IXFP102N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.018 ohm

102 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

95 pF

IXFD40N50Q2-84

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

500 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTE18N50X4U

Littelfuse

175 W

4

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

18 A

e0

IXFD12N90-7L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

900 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.9 ohm

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXCA001N140E

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

1400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2200 ohm

.02 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

10

260

IXTE10C40X4U

Littelfuse

125 W

4

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

IXFP90N20X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0128 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

4 pF

IXFQ72N20X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

320 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.02 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

1.7 pF

IXFQ50N60X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.073 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

30 pF

IXTQ30N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.215 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

115 pF

IXTD75N10P-5S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

100 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DE150-102N02A

Littelfuse

VERY HIGH FREQUENCY BAND

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTV86N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

190 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.037 ohm

86 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

92 pF

IXFD75N10-7X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.026 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT1N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

1.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

11 ohm

1.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-268AA

e3

10

260

VMM85-02F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

335 A

83 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

84 A

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ64N28T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

280 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

.049 ohm

64 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

IXTQ3N150M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

73 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

250 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

7.3 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

30 pF

IXTQ150N15P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.013 ohm

150 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFP34N60X2A

Littelfuse

IXLZ21N50

Littelfuse

N-CHANNEL

SINGLE

NO

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

IXFD76N07-7X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

70 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MTC120WX75GD

Littelfuse

IXTQ480P2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1500 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

.12 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

IXFJ40N30

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

IXTE25C10X4U

Littelfuse

125 W

4

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

25 A

e0

IXLZ15N65

Littelfuse

N-CHANNEL

SINGLE

NO

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

IXFP16N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

347 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.47 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

8.6 pF

IRFC460-6X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.27 ohm

UPPER

R-XUUC-N2

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFD14N100Q-8X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1000 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRFC450

Littelfuse

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

IXFP220N06T3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

440 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

900 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.004 ohm

220 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

50 pF

518023

Littelfuse

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

24

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Tin (Sn) - with Nickel (Ni) barrier

.0022 ohm

190 A

DUAL

R-PDSO-G24

ISOLATED

e3

IXTR20P50P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2500 mJ

13 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.49 ohm

13 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFD10N90-7L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

900 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

1.1 ohm

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.