Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTT30N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.2 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

127 pF

IXTQ120N15P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTD74N20P-6S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.042 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ100N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.027 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFP18N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.2 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

1.8 pF

MKH24I650HR

Littelfuse

FMD47-06KC5

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1950 mJ

5

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

47 A

SINGLE

R-PSIP-T5

ISOLATED

AVALANCHE RATED

UL RECOGNIZED

IXTQ30N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTT8P50

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.2 ohm

8 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

175 pF

IXFD150N15-9X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

UPPER

R-XUUC-N9

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GWM100-01X1-BL

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

90 A

17

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0085 ohm

90 A

DUAL

R-PDIP-T17

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

VMK165-007T

Littelfuse

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

70 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

660 A

165 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.006 ohm

165 A

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

TO-240AA

NOT SPECIFIED

NOT SPECIFIED

IXFQ72N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.019 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

2 pF

VHM25-05P1

Littelfuse

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

10

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.23 ohm

24 A

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFZ21N60

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

21 A

IXFZ42N20

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 A

IXTT18N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

54 A

1200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

.4 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-268AA

FMM60-02TF

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

150 A

1000 mJ

33 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.04 ohm

33 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXFP22N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.39 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

3.4 pF

IXTD20N60-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

600 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.35 ohm

UPPER

R-XUUC-N3

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFP3N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14.4 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

3.6 ohm

3.6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220

e3

IXFL24N40

Littelfuse

N-CHANNEL

SINGLE

NO

175 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

24 A

e0

IXFD80N10Q-8X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.018 ohm

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT10N100D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

400 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.4 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

100 pF

IXTQ86N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.033 ohm

86 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

73 pF

IXTR40P50P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3500 mJ

22 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.26 ohm

22 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFP130N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0091 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-220AB

95 pF

LSIC1MO170E1000

Littelfuse

NOT SPECIFIED

NOT SPECIFIED

VMM45-02F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

180 A

45 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

45 A

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

TO-240AA

NOT SPECIFIED

NOT SPECIFIED

IXTD40N25-6X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.085 ohm

UPPER

R-XUUC-N2

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFI7N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

300 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.44 ohm

7 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-263

e3

IXTD50N20-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

UPPER

R-XUUC-N3

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXKH13N60C5

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

290 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.3 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXFP44N25X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.04 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

1 pF

IXLZ10N100

Littelfuse

N-CHANNEL

SINGLE

NO

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

IXTD88N30P-8S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

300 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTL350

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IXTE9N65X4U

Littelfuse

125 W

4

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

IXKH47N60C3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

47 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

VMO650-01F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

2780 A

690 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0018 ohm

690 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTT36N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.17 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFL36N100P

Littelfuse

N-CHANNEL

SINGLE

NO

520 W

ENHANCEMENT MODE

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

IXFD73N30Q-8Y

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

300 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ48N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.05 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

40 pF

IXFD40N30-7X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

300 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFD14N80-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

800 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.7 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTD62N15P-5S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

150 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFM14N80

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.