GWM100-01X1-BL by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	GWM100-01X1-BL
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (Abs) (ID): 90 A; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL;
Datasheet	GWM100-01X1-BL Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	90 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	17
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T17
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	90 A
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.0085 ohm

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