Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
300 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.088 ohm |
UPPER |
R-XUUC-N3 |
Not Qualified |
MEGAFET |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
460 W |
PLASTIC/EPOXY |
SWITCHING |
850 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.55 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
17 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
SWITCHING |
1000 V |
ENHANCEMENT MODE |
1 |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.28 ohm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
500 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.75 ohm |
UPPER |
R-XUUC-N2 |
Not Qualified |
MEGAFET |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.03 ohm |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.1 ohm |
39 A |
SINGLE |
R-PSFM-T4 |
DRAIN |
ULTRA LOW RESISTANCE |
TO-247AD |
9 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
SWITCHING |
200 V |
ENHANCEMENT MODE |
1 |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.03 ohm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
SWITCHING |
300 V |
ENHANCEMENT MODE |
1 |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.082 ohm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Littelfuse |
125 W |
4 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
8 A |
e0 |
||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
125 W |
4 |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
10 A |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
890 W |
PLASTIC/EPOXY |
AMPLIFIER |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
510 A |
3500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.014 ohm |
170 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
930 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
540 W |
PLASTIC/EPOXY |
SWITCHING |
1500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
500 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3.5 ohm |
6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
64 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.025 ohm |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
357 W |
1 |
21 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
21 A |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
180 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
300 A |
800 mJ |
53 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
.02 ohm |
53 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.0051 ohm |
200 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3000 mJ |
18 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.05 ohm |
82 A |
UPPER |
R-XUFM-X18 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
1000 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
11 ohm |
UPPER |
R-XUUC-N2 |
Not Qualified |
MEGAFET |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
3000 mJ |
90 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.032 ohm |
90 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
AVALANCHE RATED |
e1 |
10 |
260 |
480 pF |
UL RECOGNIZED |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
690 mJ |
25 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.15 ohm |
20 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e1 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
250 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
2 |
UNCASED CHIP |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.024 ohm |
110 A |
UPPER |
R-XUUC-N |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
446 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
750 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.09 ohm |
36 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
3.6 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1800 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.035 ohm |
94 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
215 W |
PLASTIC/EPOXY |
SWITCHING |
2000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
4.2 ohm |
4 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
104 pF |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.022 ohm |
UPPER |
R-XUUC-N8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1950 mJ |
47 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.045 ohm |
47 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
AVALANCHE RATED, HIGH RELIABILITY |
e1 |
10 |
260 |
UL RECOGNIZED |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
130 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.06 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
60 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE TIN |
.27 ohm |
26 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
522 mJ |
15 A |
5 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.165 ohm |
15 A |
SINGLE |
R-PSIP-T5 |
ISOLATED |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
1000 mJ |
11 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
11 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
187 pF |
|||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
ENHANCEMENT MODE |
1 |
24 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
24 A |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
PLASTIC/EPOXY |
SWITCHING |
2500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
40 ohm |
1 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
23 pF |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
300 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.088 ohm |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
ENHANCEMENT MODE |
1 |
14 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
14 A |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
SWITCHING |
900 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.65 ohm |
UPPER |
R-XUUC-N2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
.75 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.02 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
695 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.26 ohm |
28 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
3.3 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
380 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
152 A |
5000 mJ |
29 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.28 ohm |
29 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
890 W |
PLASTIC/EPOXY |
1500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
750 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.2 ohm |
12 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
80 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
SWITCHING |
100 V |
ENHANCEMENT MODE |
1 |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.015 ohm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
34 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
400 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.03 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
AVALANCHE RATED |
TO-220AB |
1.5 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.02 ohm |
UPPER |
R-XUUC-N3 |
Not Qualified |
MEGAFET |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
Littelfuse |
125 W |
4 |
12 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
12 A |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1900 mJ |
54 A |
9 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.041 ohm |
54 A |
DUAL |
R-PDSO-G9 |
HIGH RELIABILITY |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.02 ohm |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
850 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.85 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
11 pF |
||||||||||||||||||||||||
Littelfuse |
125 W |
4 |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
10 A |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
480 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
1000 mJ |
74 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.034 ohm |
74 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.