Littelfuse Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTD40N30-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

300 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.088 ohm

UPPER

R-XUUC-N3

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFP14N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.55 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

17 pF

IXFD38N100Q2-95

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

1000 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTD11P50

Littelfuse

P-CHANNEL

SINGLE

YES

UNSPECIFIED

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

UPPER

R-XUUC-N2

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXFD80N20Q-8X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

LSIC1MO120G0080

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.1 ohm

39 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

9 pF

IXTD96N20P-7S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTD52N30P-6S

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

300 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.082 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTE8C60X4U

Littelfuse

125 W

4

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

8 A

e0

IXTE10N60X4

Littelfuse

125 W

4

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IXTX170P10P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

510 A

3500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.014 ohm

170 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

930 pF

IXTT6N150

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

SWITCHING

1500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

64 pF

IXFD67N10-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFL40N110P

Littelfuse

N-CHANNEL

SINGLE

NO

357 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

FMM110-015X2F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

300 A

800 mJ

53 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

.02 ohm

53 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXUC200N055

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e3

VMO80-05P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

3000 mJ

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

82 A

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXTD1N100-2L

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1000 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

11 ohm

UPPER

R-XUUC-N2

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXTR120P20T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

3000 mJ

90 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.032 ohm

90 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

480 pF

UL RECOGNIZED

IXKC25N80C

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

690 mJ

25 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.15 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e1

IXTD110N25T-8W

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

110 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.024 ohm

110 A

UPPER

R-XUUC-N

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFP36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

3.6 pF

IXKK94N60C3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.035 ohm

94 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTF6N200P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

2000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

4.2 ohm

4 A

SINGLE

R-PSIP-T3

ISOLATED

104 pF

IXFD90N20Q-8Y

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

8

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.022 ohm

UPPER

R-XUUC-N8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXKR47N60C5

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1950 mJ

47 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.045 ohm

47 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED, HIGH RELIABILITY

e1

10

260

UL RECOGNIZED

IXTQ50N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.06 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

60 pF

IXFQ26N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE TIN

.27 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

MKE11R600DCGFC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

522 mJ

15 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.165 ohm

15 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

UL RECOGNIZED

IXTT11P50

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

1000 mJ

11 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

187 pF

IXTZ24N50MA

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

IXTF1N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

40 ohm

1 A

SINGLE

R-PSIP-T3

ISOLATED

23 pF

IXFD40N30Q-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

300 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.088 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N7103

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

IXFD16N90Q-8X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

900 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.65 ohm

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTQ90N15T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

.75 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXFQ28N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.26 ohm

28 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

3.3 pF

IXFL38N100Q2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

152 A

5000 mJ

29 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.28 ohm

29 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

IXTT12N150

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

890 W

PLASTIC/EPOXY

1500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

750 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.2 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

80 pF

IXTD200N10P-88

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

SWITCHING

100 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

.015 ohm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFP50N20X3M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.03 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1.5 pF

IXTD75N10-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

UPPER

R-XUUC-N3

Not Qualified

MEGAFET

NOT SPECIFIED

NOT SPECIFIED

IXTE12N50X4

Littelfuse

125 W

4

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

MKG40RK600LB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1900 mJ

54 A

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.041 ohm

54 A

DUAL

R-PDSO-G9

HIGH RELIABILITY

IXFD75N10Q-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFQ8N85X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.85 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

11 pF

IXTE10N60X4U

Littelfuse

125 W

4

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IXTT74N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

480 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1000 mJ

74 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.034 ohm

74 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.