MKG40RK600LB by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	MKG40RK600LB
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G9; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
Datasheet	MKG40RK600LB Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	1900 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	54 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	9
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G9
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	HIGH RELIABILITY
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	54 A
Maximum Drain-Source On Resistance:	.041 ohm

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