NXP Semiconductors Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

934064471127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1082 A

1700 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

120 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

934065075115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

17.4 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0058 ohm

84 A

SINGLE

R-PSSO-G4

DRAIN

HIGH RELIABILITY

MO-235

BUK102-50DL,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

45 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TO-220AB

PHE83N03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.012 ohm

75 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

BLF25M612,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

1

PHD22NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42.2 A

150 mJ

21.1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.12 ohm

21.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

934066521127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1257 A

1008 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.00184 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

AEC-Q101; IEC-60134

PHT6N03TT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23.6 A

60 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

5.9 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

ESD PROTECTED

PHX8NQ11T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27.7 W

PLASTIC/EPOXY

SWITCHING

110 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30.2 A

35 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

7.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

BUK456-100B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

32 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

90 ns

285 ns

.065 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

200 pF

PHB69N03LTT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

SILICON

175 ns

215 ns

.014 ohm

69 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

934056023118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

263 A

120 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.017 ohm

66 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PHN110-TAPE-7

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

40 ns

140 ns

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

934068292135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

25 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

5.5 A

DUAL

R-PDSO-G4

DRAIN

PHB125N06T-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

934056617118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

73 A

36 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.077 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

PHP82NQ03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.01 ohm

75 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

PHD66NQ03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

93 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

228 A

90 mJ

57 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0136 ohm

66 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

260

BUK438-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.5 ohm

7.6 A

SINGLE

R-PSFM-T3

Not Qualified

934057693127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

407 A

241 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

PHD96NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

185 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0075 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

934063068115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

790 A

241 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0021 ohm

100 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

PHD66NQ03LT/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

228 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0136 ohm

66 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

PHB3055E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

10 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.15 ohm

10.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHP4N60E127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

290 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

4.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-220AB

934062188127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.005 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

934066341118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

943 A

555 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0029 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

IEC-60134

BUK107-50DST/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.175 ohm

.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

ESD PROTECTED

BUK482-100A,135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.2 A

40 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

1.8 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

PI4884

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

12 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0105 ohm

12 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

PHD12N10E118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BUK565-200A-T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 W

175 Cel

SILICON

115 ns

235 ns

.23 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

80 pF

PHT8N06T/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

3.5 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

ESD PROTECTED

PHW7N60

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

570 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-247

BUK456-200A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

90 ns

255 ns

.16 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

100 pF

PMZ270XN,315

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4.3 A

2.15 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.34 ohm

2.15 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

e3

30

260

PHN1013

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0135 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

934063294118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

668 A

292 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0036 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

934050550135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

30 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.08 ohm

3.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

ESD PROTECTED, LOGIC LEVEL COMPATIBLE

e3

934055405127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.005 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

934056643127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

217 A

115 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.02 ohm

54 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

933955540127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

50 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

8.2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BLF7G20LS-200,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK555-200B,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.28 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

BUK456-800B,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

3.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

934058818115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

95 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0097 ohm

76.7 A

SINGLE

R-PSSO-G4

934023940135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.8 A

45 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.31 ohm

1.7 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

PHD45N03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

86 W

175 Cel

SILICON

150 ns

105 ns

.024 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.