Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
208 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 W |
175 Cel |
SILICON |
130 ns |
380 ns |
.028 ohm |
52 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
400 pF |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
46.4 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
150 mJ |
99 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.0062 ohm |
99 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
Not Qualified |
LOW CONDUCTION LOSS |
MO-235 |
e3 |
|||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
65.4 A |
190 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.077 ohm |
32.7 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
|||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
995 A |
660 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0026 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
268 A |
115 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0132 ohm |
67 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235AA |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
70 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.16 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
ENHANCEMENT MODE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
24 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.022 ohm |
7 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
IEC-60134 |
|||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
200 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
142 W |
175 Cel |
SILICON |
195 ns |
260 ns |
.0105 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
183 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0073 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
25 W |
150 Cel |
SILICON |
60 ns |
145 ns |
.16 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
100 pF |
||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
34 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
358 A |
465 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.011 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1278 A |
1020 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0018 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
706 A |
372 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0039 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
140 mJ |
25 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 W |
175 Cel |
SILICON |
125 ns |
290 ns |
.085 ohm |
25 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
150 pF |
|||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
29 A |
290 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1 ohm |
7.2 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
FAST SWITCHING |
TO-220AB |
||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
187 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
75 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
ENHANCEMENT MODE |
1 |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
225 Cel |
|||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
423 A |
191 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0097 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
|||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
120 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.009 ohm |
75 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
170 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.04 ohm |
35 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
888 A |
1200 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0035 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
TO-262AA |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
688 A |
676 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0043 ohm |
120 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
TO-262AA |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.008 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, FAST SWITCHING |
TO-220AB |
||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.018 ohm |
64 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1408 A |
1405 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0016 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
25 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.029 ohm |
6.1 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
IEC-60134 |
|||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
270 A |
700 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.005 ohm |
67.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
121 mJ |
84 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0048 ohm |
84 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
|||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
210 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0037 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.2 W |
DUAL GATE, ENHANCEMENT MODE |
1 |
.03 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) |
.03 A |
e3 |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
297 A |
127 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.015 ohm |
74 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
TO-252 |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
19 A |
60 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.04 ohm |
4.9 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
280 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0071 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
706 A |
961 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0043 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.75 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16.5 A |
4.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
.065 ohm |
4.1 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
110 pF |
IEC-60134 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
120 mJ |
75 A |
3 |
IN-LINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.009 ohm |
75 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
250 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0039 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
29 A |
290 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1 ohm |
7.2 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
92 A |
93 mJ |
23 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.07 ohm |
23 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
157 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
120 mJ |
67 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.018 ohm |
73 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
30 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0245 ohm |
7.2 A |
DUAL |
S-PDSO-N6 |
DRAIN |
IEC-60134 |
|||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
302 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.004 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
116 A |
502 mJ |
29 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.063 ohm |
29 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
1.5 W |
ENHANCEMENT MODE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
2 |
e4 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
65 A |
202 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.102 ohm |
21.5 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
229 A |
94 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0205 ohm |
57 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
TO-252 |
|||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
288 A |
121 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.013 ohm |
72 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
AEC-Q101; IEC-60134 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.