Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

H5N2901FN-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

290 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.091 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

UPA1874BGR-9JG

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

80 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0195 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

H7N1004FN

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

25 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

NP40N055ELE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

2SJ471

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

UPA2757GR-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2.5 mJ

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

e3

H7P0601DSTL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA2721GR-E1-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

19 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0063 ohm

19 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP34N055HLE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

100 mJ

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.024 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

NP110N03PUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP70N10KUF-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

NOT SPECIFIED

NOT SPECIFIED

RJK5013DPP-00#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.465 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

HAT3010R

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

48 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

NP84N055MHE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

441 mJ

84 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0073 ohm

84 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

H5N3004P

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.093 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

UPA1763G-E2-A

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

RJK5032DPD-00#J2

Renesas Electronics

N-CHANNEL

SINGLE

YES

40.3 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

FS30KM-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.092 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

UPA1811GR-9JG-E1-A

Renesas Electronics

TIN BISMUTH

e6

PM5075J

Renesas Electronics

NO

325 W

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

75 A

8

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.12 ohm

75 A

UPPER

R-XUFM-X8

Not Qualified

H7N1002LD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.015 ohm

75 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

2SJ215

Renesas Electronics

P-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

35 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.09 ohm

35 A

SINGLE

R-PSFM-T3

1

Not Qualified

2SJ199

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

RQA0009TXDQS#H1

Renesas Electronics

N-CHANNEL

SINGLE

YES

15 W

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

NOT SPECIFIED

NOT SPECIFIED

UPA2821T1L-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

52 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

RJF0611JPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE

YES

50 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

RJK4007DPP-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

32 W

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.6 A

1

20

260

2SJ408(S)

Renesas Electronics

P-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.028 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

H7N1005LSTR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NOT SPECIFIED

NOT SPECIFIED

RJK60S5DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE

YES

125 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

H5N3007FL-M0-E#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

UPA2750GR-E1-AT

Renesas Electronics

N-CHANNEL

YES

2 W

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NOT SPECIFIED

NOT SPECIFIED

NP84N055KHE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

441 mJ

84 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0073 ohm

84 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

ISL73020SEHX/SAMPLE

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

30

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-55 Cel

GOLD

.0015 ohm

65 A

BOTTOM

R-XBCC-N30

HIGH RELIABILITY

e4

29 pF

FS50ASJ-03

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA2706GR(0)-E1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ213

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.5 A

e0

FS3KM-9A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SJ179-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

1.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

1.5 A

SINGLE

R-PSSO-F3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

HAT2108R-EL-E

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

28 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

11 A

DUAL

R-PDSO-G8

1

Not Qualified

FS14KM-9A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.52 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP110N03PUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

RJK5013DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.465 ohm

14 A

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HAT2126RP

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

96 A

11

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.027 ohm

12 A

DUAL

R-PDSO-G11

Not Qualified

HAT1097RJ-EL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

5 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

H5N2305P-E

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP84N055CHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

441 mJ

84 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0073 ohm

84 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

RJK60S5DPK-M0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.178 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.