Renesas Electronics - H7N1005LSTR-E

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H7N1005LSTR-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number H7N1005LSTR-E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 15 A; Maximum Drain Current (ID): 15 A;
Datasheet H7N1005LSTR-E Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 30 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 15 A
Maximum Drain Current (Abs) (ID): 15 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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