Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA1725G-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

260

HAT2171H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

40 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

NP36N055ILE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

144 A

108 mJ

36 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.018 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

RJK60S3DPD-00#J2

Renesas Electronics

N-CHANNEL

SINGLE

YES

73.5 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

FS100UMJ-03F

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0057 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

H7N1004LD-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.045 ohm

30 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e6

HAT3029R-EL-E

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

48 A

6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.058 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

NP55N04SUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

10

260

FS4KM-12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

2.4 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP80N055CHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

100 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.011 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

UPA2813T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

27 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.0062 ohm

27 A

e3

260

FS16UM-9

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NP36N055HHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

108 mJ

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

RJL5014DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57 A

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

19 A

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HAT2020REL

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

FS70KM-2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

70 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP82N04NUG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0042 ohm

82 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

HAT1035R-EL-E

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1 A

.25 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 ohm

.25 A

DUAL

R-PDSO-G8

1

Not Qualified

NP34N03ILD

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.2 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

HAT2114R

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

48 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

AVALANCHE RATED

2SJ505(S)TL

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

50 A

SINGLE

R-PSSO-G2

Not Qualified

FS50KMJ-3-A8

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK4057-S15-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

19 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

UPA1717G-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

FK14KM-9

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.65 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP60N055KUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP40N055EHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

H7N1004LM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA622TT-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SJ294-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.095 ohm

20 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

e2

FX30KMJ-2-A8

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.176 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP36P06SLG

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

56 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

54.8 mJ

36 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.04 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

RJL5020DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

114 A

38 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.135 ohm

38 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

2SJ329-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

490 mJ

15 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

10

260

RJK6012DPP-00#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.92 ohm

10 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

NP60N04ILF-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

10

260

FS14SM-9

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP110N055PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0024 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

UPA2715GR-E1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

32.4 mJ

18 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.009 ohm

18 A

DUAL

R-PDSO-G8

Not Qualified

e6

PM50150K

Renesas Electronics

NO

500 W

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

150 A

8

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.08 ohm

150 A

UPPER

R-XUFM-X8

Not Qualified

RJK2017DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

135 A

45 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.047 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA2718AGR-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

16.9 mJ

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0182 ohm

13 A

DUAL

R-PDSO-G8

Not Qualified

e3

260

NP160N055TUJ-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2793AGR-E1-AT

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

28 A

4.9 mJ

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.023 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP89N04PDK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

H7N0602LD-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.009 ohm

85 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e6

FS50KMJ-2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.052 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP48N055CHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

85 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

48 A

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.