Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

HAT2143H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0115 ohm

40 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

NP36N055IHE-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

2SJ540-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.23 ohm

12 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e2

HAT2179R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.7 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS10UM-6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NP90N055PDH-E2-AY

Renesas Electronics

2SJ297(S)TR

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.095 ohm

20 A

SINGLE

R-PSSO-G2

Not Qualified

FS50KM-06

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.022 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK681A-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

10

260

RJK2017DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

200 V

1

45 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.047 ohm

45 A

NOT SPECIFIED

NOT SPECIFIED

UPA2792GR-E2-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

10 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.021 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e6

2SJ517YYTL

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.43 ohm

2 A

SINGLE

R-PSSO-F3

Not Qualified

e0

NP84N055EHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

441 mJ

84 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0073 ohm

84 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

2SK820

Renesas Electronics

N-CHANNEL

SINGLE

NO

80 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

RQJ0301HGDQSTL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

5.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.079 ohm

5.2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e6

20

260

2SJ494

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.088 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

RQA0005MXAQS

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

16 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

2SJ173

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

HAT3015R-EL-E

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5.5 ohm

.5 A

DUAL

R-PDSO-G8

1

Not Qualified

NP32N055SDE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

RJK3008DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.093 ohm

40 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

H7N0310LMTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.019 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP34N055ILE-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

2SJ528STR-E

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ318(S)TR

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

5 A

SINGLE

R-PSSO-G2

Not Qualified

H5N2005DS

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.65 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

RJL5013DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOW LEAKAGE CURRENT

NP86N04KHE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

344 A

580 mJ

86 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0044 ohm

86 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

UPA1853GR-9JG-E1-A

Renesas Electronics

TIN BISMUTH

e6

FS2ASJ-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.81 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NP82N04PDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

143 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

2SJ292-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.06 ohm

30 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e2

FX3ASJ-3-T23

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.32 ohm

3 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NP84N04CHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

484 mJ

84 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0052 ohm

84 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

10

260

HAT2080T-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

1.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

1.2 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

UPA2502TM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

52 A

16.9 mJ

13 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.018 ohm

13 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

ISL73020SEHML

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-55 Cel

GOLD

.006 ohm

65 A

BOTTOM

R-XBCC-N4

DRAIN SOURCE

HIGH RELIABILITY

e4

29 pF

NP84N04EHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

484 mJ

84 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0052 ohm

84 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

FS100VSJ-03F-A1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0057 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA1760G-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1728G-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

81 mJ

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.034 ohm

9 A

SINGLE

R-PSSO-G8

Not Qualified

e6

10

260

NP82N055KLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

163 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

289 mJ

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.012 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

FX20KMJ-2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.32 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP90N04PUF-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

220 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

H5N3007CF

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

UPA2733GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NOT SPECIFIED

NOT SPECIFIED

FS100VSJ-03

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0008 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SJ181L

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1 A

.5 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

25 ohm

.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.