Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA2719GR-E1-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

10 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0255 ohm

10 A

DUAL

R-PDSO-G8

e6

UPA2660T1R-E2-AX

Renesas Electronics

N-CHANNEL

YES

2.3 W

20 V

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

e4

260

RJF0611DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE

YES

50 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

FX50KMJ-2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.061 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP60N06PDK-E2-AY

Renesas Electronics

NP48N055NHE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

100 mJ

48 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.017 ohm

48 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

NP90N04PDH-E1-AY

Renesas Electronics

NP82N06PDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

270 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0085 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

HAT2201R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.049 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

20

260

NE55410GR

Renesas Electronics

N-CHANNEL

YES

40 W

ENHANCEMENT MODE

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

H5N2512FL-M0-E#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

2SK430L

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

HAF2007S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

2SJ409(S)TR

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.22 ohm

20 A

SINGLE

R-PSSO-G2

Not Qualified

NP80N03NDE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

160 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.011 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

UPA1812GR-9JG-E1-A

Renesas Electronics

TIN BISMUTH

e6

UPA2703GR-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

28.9 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.0076 ohm

17 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

FS30VSJ-2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.091 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA2726T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

40 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.011 ohm

20 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

NP90N04MDH-S18-AY

Renesas Electronics

NP60N04KUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NP36N055SHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

HAT2105R-EL-E

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5.5 ohm

.5 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP82N055EHE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

163 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

289 mJ

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0086 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP34N055IHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

HAT2016R-EL-E

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

52 A

6.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

UPA2713GR-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

UPA2715GR-E2-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

32.4 mJ

18 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.009 ohm

18 A

DUAL

R-PDSO-G8

Not Qualified

e6

NP82N055PUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

143 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

2SJ161

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

140 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

7 A

SINGLE

R-PSFM-T3

SOURCE

Not Qualified

e0

H7N0312LD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0058 ohm

85 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

FX6ASJ-06-T23

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.37 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

HAT2168H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0135 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP82N06NLG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

270 A

82 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0097 ohm

82 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

UPA1803GR-9JG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

HAT2132H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.45 ohm

6 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

RJK5006DPD-00-J2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOW LEAKAGE CURRENT

H7N0312LM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0058 ohm

85 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA2762UGR-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

14.4 mJ

12 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0135 ohm

12 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK2006DPJ-TL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.059 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

UPA2722UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0046 ohm

29 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

NP55N04SUG-E1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ506STL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.18 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

140 pF

FS50SMJ-03

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

UPA1857GR-9JG-E1-AT

Renesas Electronics

N-CHANNEL

YES

1.7 W

ENHANCEMENT MODE

3.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.8 A

2SK854

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

FX50KMJ-06-A8

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.032 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

UPA1727G-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.