Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK682	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				12 A
UPA2502TM-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2.7 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				13 A									10	260
NP48N055KHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	100 mJ	48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.017 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		10	260
UPA1873GR-9JG-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W										6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		6 A								e6
HAT1038R-EL-E	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.23 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
UPA2738GR-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	NICKEL PALLADIUM GOLD	.029 ohm	10 A	DUAL	R-PDSO-G8						e4			650 pF
UPA2756GR-E1	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
UPA1750G-E2-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				3.5 A									NOT SPECIFIED	NOT SPECIFIED
2SJ506(S)TL	Renesas Electronics	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		.18 ohm	10 A	SINGLE	R-PSSO-G2			Not Qualified
UPA1772G(0)-E1-AY	Renesas Electronics																																NOT SPECIFIED	NOT SPECIFIED
HAT2174H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.03 ohm	20 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
2SJ297(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.095 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
HAT3005R-EL-E	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2 A		.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		5.5 ohm	.5 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
FY8AAJ-03F	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		.028 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified
UPA1724G-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
UPA2709GR-E2-AT	Renesas Electronics	N-CHANNEL		YES	2.5 W										13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				13 A									NOT SPECIFIED	NOT SPECIFIED
H7N0311LMTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.016 ohm	45 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
UPA1807GR-9JG-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		12 A								e6
NP32N055SHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	66 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	49 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.025 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA
2SK619	Renesas Electronics	N-CHANNEL	SINGLE	NO	10 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
NP110N03PUG-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	288 W						ENHANCEMENT MODE	1			110 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				110 A
NP82N055KLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	163 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	289 mJ	82 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.012 ohm	82 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
UPA2724UT1A-E1-AZ	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SINGLE	YES	4.6 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1			29 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.005 ohm	29 A	DUAL	R-PDSO-F8			Not Qualified	TAPE AND REEL		e6
UPA2630T1R-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		NICKEL PALLADIUM GOLD		7 A								e4		260
2SK819	Renesas Electronics	N-CHANNEL	SINGLE	NO	100 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
2SJ214(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.25 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP55N055SDG-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	77 W							1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				55 A									NOT SPECIFIED	NOT SPECIFIED
NP90N04MUK-S18-AY	Renesas Electronics	N-CHANNEL	SINGLE	NO	176 W							1			90 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel				90 A									NOT SPECIFIED	NOT SPECIFIED
N0605N-S19-AY	Renesas Electronics																																NOT SPECIFIED	NOT SPECIFIED
H7N0607DL	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.056 ohm	20 A	SINGLE	R-PSIP-T3	1		Not Qualified			e6
UPA2725T1A-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4.6 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	62 mJ	25 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.0075 ohm	25 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified			e3
2SJ448	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	80 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	2 ohm	4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE, AVALANCHE RATING		e0
UPA2502TM-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	2.7 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				13 A
UPA1807GR-9JG-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				12 A
2SJ128-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				10	260
NP86N04DHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	344 A	580 mJ	86 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.0044 ohm	86 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e0
RQJ0305EQDQS#H1	Renesas Electronics	P-CHANNEL	SINGLE	YES	1.5 W							1			3.4 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				3.4 A									NOT SPECIFIED	NOT SPECIFIED
UPA2701GR-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				14 A									NOT SPECIFIED	NOT SPECIFIED
FY8BCH-02F	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	56 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.016 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified
HAF2014	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.033 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SJ462	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.19 ohm	2.5 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified			e0
FS7UM-5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.8 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
H7N0307LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A		60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0115 ohm	60 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
RJK6035DPP-A0#T2	Renesas Electronics
FS4UM-12	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.6 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
NP32N055ILE-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	66 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				32 A
2SJ117	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A		2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		7 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
UPA2718GR-E2-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			13 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		13 A								e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.