Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
163 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
289 mJ |
82 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.011 ohm |
82 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
100 W |
ENHANCEMENT MODE |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
76 A |
36 mJ |
19 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.015 ohm |
19 A |
DUAL |
R-PDSO-F8 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
28 W |
ENHANCEMENT MODE |
3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
3 A |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
70 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
50 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.055 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
30 W |
ENHANCEMENT MODE |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
8 A |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
YES |
2 W |
6.8 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
6.8 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
66 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
49 mJ |
40 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.023 ohm |
40 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
TO-263AB |
e0 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.9 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
85 W |
ENHANCEMENT MODE |
1 |
48 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
48 A |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
85 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
100 mJ |
48 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.017 ohm |
48 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
288 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.0094 ohm |
60 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
TO-263AB |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
14 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.01 ohm |
14 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
100 ns |
.0057 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
180 pF |
AEC-Q101 |
||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
4.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
170 A |
84.1 mJ |
29 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0046 ohm |
29 A |
DUAL |
R-PDSO-F8 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
120 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
169 mJ |
80 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.008 ohm |
80 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e0 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.17 ohm |
10 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
120 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
400 mJ |
80 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.011 ohm |
80 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e0 |
|||||||||||||||||||||
|
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
90 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
12 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.6 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.63 ohm |
7 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e6 |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62.5 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2.4 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18 A |
4.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
4.5 A |
DUAL |
R-PDSO-F8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
10 W |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
TIN BISMUTH |
2 A |
SINGLE |
R-PSSO-F3 |
SOURCE |
Not Qualified |
e6 |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
336 A |
484 mJ |
84 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0052 ohm |
84 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
105 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
90 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.006 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Renesas Electronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.29 ohm |
6 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.019 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
77 W |
1 |
55 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
55 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
100 W |
ENHANCEMENT MODE |
1 |
60 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
60 A |
|||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
4.6 W |
1 |
29 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
29 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
18 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
.11 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
1 |
ISOLATED |
Not Qualified |
TO-220AB |
e2 |
||||||||||||||||||||
Renesas Electronics |
NO |
300 W |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
50 A |
8 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.12 ohm |
50 A |
UPPER |
R-XUFM-X8 |
Not Qualified |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
52 W |
1 |
25 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
25 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
15 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.255 ohm |
15 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
348 W |
1 |
110 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
110 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
100 mJ |
80 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.015 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Renesas Electronics |
TIN BISMUTH |
e6 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.575 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||||||
|
Renesas Electronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
20 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.14 ohm |
10 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
e6 |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
61 mJ |
40 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Pure Tin (Sn) |
.036 ohm |
40 A |
DUAL |
R-PDSO-F8 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
336 A |
400 mJ |
84 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.0094 ohm |
84 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e0 |
|||||||||||||||||||||
|
Renesas Electronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
20 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
.5 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
25 ohm |
.5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
100 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.011 ohm |
80 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e0 |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
16 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3.2 A |
SINGLE |
R-PSSO-F3 |
1 |
SOURCE |
Not Qualified |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.