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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NP110N04PUK-E1-AY |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 110 A; |
| Datasheet | NP110N04PUK-E1-AY Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
-1161-NP110N04PUK-E1-AYTR-ND -1161-NP110N04PUK-E1-AY -1161-NP110N04PUK-E1-AYTR -1161-NP110N04PUK-E1-AY-ND NP110N04PUK-E1-AY-ND 559-NP110N04PUK-E1-AYCT 559-NP110N04PUK-E1-AYTR 559-NP110N04PUK-E1-AYDKR -1161-NP110N04PUK-E1-AYCT |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 110 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Maximum Power Dissipation (Abs): | 348 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 110 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









