Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP60N055KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP40N055DLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

10

260

2SJ291

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

HAF2011-90S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.033 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

HAT2174N-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ356C-T1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.556 ohm

2 A

SINGLE

R-PSSO-F3

DRAIN

NP36N10SDE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

142 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

NP84N04NHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

372 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0052 ohm

84 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

RJK5014DPP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

38 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.39 ohm

19 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

FS100VSJ-03F-T11

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0057 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

RJJ1011DPD-00-J2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

6 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SJ527L

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.8 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

FS50KMJ-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NP60N04KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

2SJ208-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

RQK0301FGDQSTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.049 ohm

6 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e6

20

260

RJK2017DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

135 A

45 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.047 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NP110N055PUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP11N055PUG

Renesas Electronics

N-CHANNEL

SINGLE

NO

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

110 A

e0

H5N3003P

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.069 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SJ452ZM-UL

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NP84N055DHE-S12-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

441 mJ

84 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0073 ohm

84 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

2SJ384L

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.01 ohm

15 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

FY10AAJ-03F

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.018 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

HAT2200WP-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

20

260

FK16VS-5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.31 ohm

16 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

HAT2201WP-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

20

260

FX30KMJ-2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.176 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

FK10SM-10

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.13 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP82N055DHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1.8 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

289 mJ

82 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0086 ohm

82 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

RJK5033DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27.4 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.3 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

RJK2006DPJ

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

ISL70023SEHL/PROTO

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

SILICON

-55 Cel

GOLD

.012 ohm

60 A

BOTTOM

R-XBCC-N4

HIGH RELIABILITY

e4

18 pF

MIL-38535

HAT1020R

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NP34N055IHE-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP90N04VUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP86N04DHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

230 W

ENHANCEMENT MODE

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

86 A

2SK832

Renesas Electronics

N-CHANNEL

SINGLE

NO

85 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FS18KM-10A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

RJK6036DP3-A0#J2

Renesas Electronics

N-CHANNEL

SINGLE

YES

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

H5N2508DSTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.63 ohm

7 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

20

245

2SJ236

Renesas Electronics

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.25 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

UPA1764G-E2-AZ

Renesas Electronics

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

RJK4018DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

129 A

43 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

43 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP22N055ILE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

UPA2717AGR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

22.5 mJ

15 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0104 ohm

15 A

DUAL

R-PDSO-G8

Not Qualified

e3

260

H5N5004PL-E0-E#T2

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA1764G-E1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.