Renesas Electronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FY6BCH-02

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

42 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

UPA2709GR-E1-AT

Renesas Electronics

N-CHANNEL

YES

2.5 W

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

NOT SPECIFIED

NOT SPECIFIED

NP80N03KDE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

UPA1707G-E1-A

Renesas Electronics

TIN BISMUTH

e6

260

NP83P04PDG-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

249 A

315 mJ

83 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

83 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

UPA1722G-E2-A

Renesas Electronics

TIN BISMUTH

e6

NP36N055ILE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

UPA2708GR-E2-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

28.9 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0075 ohm

17 A

DUAL

R-PDSO-G8

Not Qualified

e6

RJK4007DPP-80T

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.55 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK4146-S19-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

84 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0101 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

ISL73020SEHL/PROTO

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-55 Cel

GOLD

.006 ohm

65 A

BOTTOM

R-XBCC-N4

DRAIN SOURCE

HIGH RELIABILITY

e4

29 pF

NP34N055HLE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

88 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

NP110N04PUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0018 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

2SJ133-Z-E1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

H5N2505DSTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.89 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

20

245

NP32N055IHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

FS70KM-2-A8

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

70 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

UPA2350T1P-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

BALL

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-B4

Not Qualified

e6

2SJ128(0)-Z-E1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA2701TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

32.4 mJ

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0137 ohm

35 A

DUAL

R-PDSO-G8

Not Qualified

e0

H7N1004FN-E-A9

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

H7N0602LM

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

85 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.009 ohm

85 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA1709G-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

e6

10

260

NP90N04NUH-S18-AY

Renesas Electronics

UPA1856GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

YES

2 W

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

2SK551

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NP22N055SHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

45 W

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

RQJ0304DQDQSTL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.6 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.42 ohm

2.6 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP90N06VLG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

RJK5015DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

25 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

UPA2812T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

30 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0048 ohm

30 A

NOT SPECIFIED

NOT SPECIFIED

NP84N075KUE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

333 mJ

84 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0125 ohm

84 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

2SJ127

Renesas Electronics

P-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

UPA2701GR-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

14 A

e6

H7N0311LS

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.016 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FX30ASJ-03

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.061 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NP84N06CLD

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

185 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

84 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0065 ohm

84 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2SJ384(S)TR

Renesas Electronics

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

15 A

SINGLE

R-PSSO-G2

Not Qualified

HAT2053M

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.05 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24.4 A

6.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.048 ohm

6.1 A

DUAL

R-PDSO-G6

Not Qualified

2SJ199(0)-T1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

H5N2515P-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

165 A

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.044 ohm

55 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HAT2187WP-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

UNSPECIFIED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

34 A

17 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.094 ohm

17 A

DUAL

R-XDSO-N5

1

DRAIN

Not Qualified

20

260

RJK5013DPP-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

1

14 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

FS5AS-3-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.38 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA672T-T2-AT

Renesas Electronics

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NP179N055TUK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK4058-S15-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

29 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

48 A

2SJ179-T2-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.