Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK22A65X,S5X

Toshiba

TK45S06K3L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

50 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0164 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

SSM6K407TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

TK12P50W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

167 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.34 ohm

11.5 A

SINGLE

R-PSSO-G2

DRAIN

TKR74F04PB,LXGQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

750 A

731 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.00098 ohm

250 A

SINGLE

R-PSSO-G2

DRAIN

1300 pF

AEC-Q101

TK46A08N1,S4X(S

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

SSM4K27CT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.4 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

TPCA8A02-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

2SK793

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

SILICON

TIN LEAD

2.5 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

SSM5N16FE(TE85L,F)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TPC8057-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TPN11003NL(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

19 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

TPCA8085(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

55 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

YTF840

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.85 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TK17A65W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69.2 A

314 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.23 ohm

17.3 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPC8050-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

TK65G10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

283 A

93 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0045 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

42 pF

TK60S06K3L(TE16L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

SSM6K211FE(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

2SK4017

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

40.5 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

TPC8058-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TPCP8012(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

2.01 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

TPC8A01

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

34 A

93.9 mJ

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.03 ohm

8.5 A

DUAL

R-PDSO-G8

Not Qualified

e0

TPCA8011-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

TK70A06J1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

751 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0076 ohm

70 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPCA8025(TE12L1)

Toshiba

2SK893

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

SILICON

1.5 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

TPCA8A04-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

44 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

44 A

TK22A65X5,S5X

Toshiba

TPCA8A01-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

108 A

168 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0085 ohm

36 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TK6R7P06PL

Toshiba

TPCF8002(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

TPC8401

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

46.8 mJ

4.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

TPCA8105(TE12L1,Q)

Toshiba

SSM6N09FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 A

SSM5H07TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

85 Cel

1.2 A

TK155U65Z

Toshiba

2SJ224TE24L

Toshiba

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

80 W

SILICON

.2 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TPC8202

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

32.5 mJ

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

.07 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

TK20E60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

200 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.155 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK3R3E03GL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

50 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.004 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

2SK791

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

TIN LEAD

4.5 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

2SK4021

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

51 mJ

4.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

4.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TPC8A04-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TK13H90A1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

491 mJ

13 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

13 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TK2R4A08QM

Toshiba

TPC8123

Toshiba

Not Qualified

TK32E12N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

98 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

48 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0138 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

13 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.