Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SSM6N25TU(TE85L,F)

Toshiba

N-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

2SK4037(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

TK7A90E,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

235 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

10 pF

TK62N60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

247 A

698 mJ

61.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

61.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

TK10X40D(TE24L)

Toshiba

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

SSM6P69NU,LF

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

16 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

4 A

DUAL

S-PDSO-N6

DRAIN

76 pF

AEC-Q101

2SK673

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

SILICON

TIN LEAD

.12 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPCP8403

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.48 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

18.8 A

10.6 mJ

4.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

4.7 A

DUAL

R-PDSO-F8

Not Qualified

2SK4019

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

80 pF

TK15J60U(Q)

Toshiba

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

TK17A65W5,S5X

Toshiba

YTF610

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.5 ohm

2.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPCA8108(TE12L1,Q)

Toshiba

TW069J120A

Toshiba

TK4P50D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

114 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SJ239LBTE16L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

.25 ohm

5 A

SINGLE

R-PSSO-G2

Not Qualified

TPCP8011(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.96 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

YTF640

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.18 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TK50S04K3L(TE16L1)

Toshiba

N-CHANNEL

SINGLE

YES

68 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

TK70J20D(F)

Toshiba

N-CHANNEL

SINGLE

NO

410 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

70 A

TPCA8101

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

208 mJ

40 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.015 ohm

40 A

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPC8054-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

TPC8082(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TPCA8075(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

63 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

48 A

SSM6P49NU(TE85L)

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

16 A

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

4 A

DUAL

S-PDSO-N6

DRAIN

TPCA8086

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

105 A

71 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0166 ohm

35 A

DUAL

S-PDSO-F5

DRAIN

TK3A65DA

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

244 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.51 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

SSM6K405TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

TPCA8025(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

2SJ241

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

TIN LEAD

.09 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

2SK405-O

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

160 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

100 W

150 Cel

SILICON

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TK3R2A10PL

Toshiba

TPCA8057-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

126 A

229 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0032 ohm

42 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

2SK4033(NQ)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

40.5 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

TPCA8135

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

15 A

34 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.162 ohm

5 A

DUAL

S-PDSO-F5

DRAIN

TPC8080(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

YTF611

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.5 ohm

2.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

MG8D6EM1

Toshiba

N-CHANNEL

COMPLEX

250 V

ENHANCEMENT MODE

6

METAL-OXIDE SEMICONDUCTOR

SILICON

8 A

Not Qualified

2SK790

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

SILICON

TIN LEAD

.4 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

TK9P65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

37.2 A

116 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.56 ohm

9.3 A

SINGLE

R-PSSO-G2

DRAIN

TPCA8025(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

SSM6N40TU(TE85L,F)

Toshiba

N-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

TK12X60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

69 mJ

12 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.42 ohm

12 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

TPCA8A02-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

TK20J60W(F)

Toshiba

N-CHANNEL

SINGLE

NO

165 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

XPN6R706NC

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

80 A

122 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0133 ohm

40 A

DUAL

S-PDSO-F8

DRAIN

130 pF

AEC-Q101

TPC8081(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TPCC8067-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.