Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK8R2E06PL

Toshiba

MG50D2DM1

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

100 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.085 ohm

50 A

UPPER

R-PUFM-X8

Not Qualified

TPCA8062-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

84 A

101 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0071 ohm

28 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TK9A65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37.2 A

129 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

9.3 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK55S10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

157 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

165 A

93 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0065 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

210 pF

AEC-Q101

YTA830

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

150 Cel

SILICON

TIN LEAD

1.5 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TK3A90E

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

217 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

4.6 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

2SJ567(2-7J1B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

97.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

2.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TP86R203NL(Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TK1K0A60F,S4X

Toshiba

TK60J25D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

410 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

497 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.038 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

2SJ359TP

Toshiba

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.25 ohm

5 A

SINGLE

R-PSIP-T3

Not Qualified

TPC8403

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

46.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.046 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

TPC8051-H

Toshiba

Not Qualified

TPC8047-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

TK10A80W

Toshiba

SSM6N36FE(TE85L)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

TPCA8050-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

72 A

42 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0153 ohm

24 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TPC8050-H

Toshiba

Not Qualified

TK15S04N1L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

23 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.037 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

TK5P65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20.8 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.22 ohm

5.2 A

SINGLE

R-PSSO-G2

DRAIN

YTF842

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.1 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

2SJ241SMTE24L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

.045 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SJ315(2-7B1B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6N7002BFE(TPL3)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

TPCA8A10-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

58 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

TPCA8108

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

148 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0095 ohm

40 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

TK35A08N1,S4X(S

Toshiba

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

YTFP452

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

85 ns

220 ns

.5 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

200 pF

TPH8R80ANH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

TPCC8065-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

18 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TP86R203NL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

109 A

46 mJ

18 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0062 ohm

19 A

DUAL

R-PDSO-G8

TK380P65Y

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38.8 A

96 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

9.7 A

SINGLE

R-PSSO-G2

DRAIN

2.5 pF

TPCC8076(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

39 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

TPCC8067-H

Toshiba

TK7S10N1Z,LXHQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

19.6 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.048 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

36 pF

AEC-Q101

TPC8092

Toshiba

TK5R1A08QM

Toshiba

TPN30008NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

YTF532

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.25 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

2SJ338-O(2-7B2B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

180 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK28V65W,LQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

240 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

110 A

347 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

27.6 A

SINGLE

S-PSSO-N4

DRAIN

8 pF

TPCA8A08-H(TE12L1)

Toshiba

SSM6J512NU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0401 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

225 pF

3SK73

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

MP4411

Toshiba

N-CHANNEL

COMPLEX

NO

28 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12 A

140 mJ

3 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

3 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

TPCA8091-H

Toshiba

TK5A60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.6 A

71 mJ

5.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

5.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.5 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.