Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TPCA8078

Toshiba

SSM6N15FU(TE85L)

Toshiba

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TK42A12N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

167 A

92 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0094 ohm

88 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

30

260

2SJ315(2-7B2B)

Toshiba

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

SMALL OUTLINE

TIN LEAD

.4 ohm

SINGLE

R-PSSO-G2

Not Qualified

e0

TK28V65W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

240 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

110 A

347 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

27.6 A

SINGLE

S-PSSO-N4

DRAIN

8 pF

S3578

Toshiba

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

45 A

e0

SSM6N44FE(TE85L)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SJ313

Toshiba

P-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

1 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6N17FU(TE85L)

Toshiba

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TPC8051-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

XPH6R30ANB

Toshiba

TK100F04K3(TE24L)

Toshiba

N-CHANNEL

SINGLE

YES

180 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

TPC8305

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

32.5 mJ

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.08 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

e0

TPCC8067-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

TPCA8A09-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

153 A

338 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0028 ohm

51 A

DUAL

S-PDSO-F5

DRAIN

TPCA8007-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

351 mJ

20 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.047 ohm

20 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

TK10S04K3L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

18.2 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.054 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

TPC8207(TE12L)

Toshiba

N-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

SSM6K30FE(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

TK60F10N1L,LXGQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

205 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

187 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.00925 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

220 pF

AEC-Q101

2SK4023(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

TK12J55D(F)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

2SJ338-O(2-7B1B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPH5R906NH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

57 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPCA8053-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

45 A

16 mJ

15 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.024 ohm

15 A

DUAL

S-PDSO-F5

DRAIN

90 pF

TK25A60X5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

347 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.14 ohm

25 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPCA8050-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

TK22A65X

Toshiba

TK17V65W,LQ

Toshiba

TK110E10PL,S1X

Toshiba

TPCA8011-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

208 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

40 A

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPCA8045-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

138 A

196 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0041 ohm

46 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TPCA8064-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

60 A

104 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0106 ohm

20 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

S3F29

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

11 A

DUAL

R-PDSO-G8

Not Qualified

2SK4002

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

93 mJ

2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

2SK530

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

TIN LEAD

1.4 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

TPC8106-H

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

130 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

FAST SWITCHING

SSM6J507NU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

10 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.032 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

185 pF

TK65S04K3L(TE16L1,Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

130 mJ

65 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

65 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

YTF533

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.25 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

SSM6N16FU(TE85L)

Toshiba

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6K504NU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

TPC6105

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.8 A

1.2 mJ

2.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

2.7 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK674

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

TIN LEAD

.06 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPCA8054-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

60 A

245 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0213 ohm

20 A

DUAL

R-PDSO-F5

DRAIN

TK11S10N1L,LQ

Toshiba

2SK892

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

3 ohm

2.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

TK80S04K3L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.