Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MP6801

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

30 A

10 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.115 ohm

10 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

TPCC8070(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

46.8 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

TK110E10PL

Toshiba

SSM6N48FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TK100A06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

584 A

413 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0027 ohm

100 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPCP8012(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

2.01 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

TPC8A06-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TK5A60W,S4VX

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.6 A

71 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

5.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.5 pF

TPCA8006-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TK7Q65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27.2 A

90 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

6.8 A

SINGLE

R-PSIP-T3

DRAIN

2SK890

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

75 W

SILICON

.4 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

TK72A12N1,S4X(S

Toshiba

N-CHANNEL

SINGLE

NO

45 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

2SK672

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

.2 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

SSM6N7002BFE(TPL3,F)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

TK17C65W

Toshiba

TPCP8205-H

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TK15E60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

81 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

YTF540

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.085 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPC6067

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TPCC8009(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

2SJ567

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

97.5 mJ

2.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2 ohm

2.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

TK12A53D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

378 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.58 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK22E10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

72 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

102 A

48 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0138 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK380P60Y

Toshiba

TPC8050-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

TK2P60D(TE16L1)

Toshiba

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

TK13A65U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

86 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK190A65Z

Toshiba

2SJ315TE16L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

TIN LEAD

.4 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

RFM01U7P(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

3 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

TJ80S04M3L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

148 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

TPCP8203(TE85L,F)

Toshiba

N-CHANNEL

YES

1.48 W

ENHANCEMENT MODE

4.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

TPCA8057-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

57 W

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

TPC8065-H

Toshiba

Not Qualified

MP4708

Toshiba

N-CHANNEL

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

10 A

SINGLE

R-PSIP-T12

Not Qualified

TK30J25D(F)

Toshiba

N-CHANNEL

SINGLE

NO

260 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

TK25N60X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

306 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.125 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

TPC8213-H(TE12L,Q)

Toshiba

TPH8R80ANH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

XPN7R104NC

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

60 A

83 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0142 ohm

20 A

DUAL

S-PDSO-F8

DRAIN

90 pF

AEC-Q101

MP4702

Toshiba

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

36 W

SILICON

.74 ohm

3 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

TK110A65Z

Toshiba

TPCA8089

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

15 A

31 mJ

5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.091 ohm

5 A

DUAL

S-PDSO-F5

DRAIN

SSM5N16FE(TPL3)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6K25FE(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

MP6401

Toshiba

N-CHANNEL AND P-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.32 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

SSM5N15FE(TE85L,F)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

30

260

TPN14006NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

33 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.