Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TPC8074

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

75 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0087 ohm

17 A

DUAL

R-PDSO-G8

Not Qualified

88 pF

TPC8A05-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

SSM6K18TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

TPCA8081(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

52 W

ENHANCEMENT MODE

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

38 A

TPCP8009(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

2.01 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2SJ312SMTE24L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

.12 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TK10A50W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

38.8 A

161 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.38 ohm

9.7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK11A60D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

396 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.65 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

YTF612

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

2.4 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPCA8055-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

56 A

2SJ412(TO-220SM)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

292 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.32 ohm

16 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK39N60X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

155 A

608 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.065 ohm

38.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

2SJ377TE16L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

.28 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

SSM6K201FE

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.6 A

2.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.186 ohm

2.3 A

DUAL

R-PDSO-F6

Not Qualified

TPCA8024

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

105 A

159 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0078 ohm

35 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TPC6011

Toshiba

Not Qualified

TPCC8068-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

17 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TK28V65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

240 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

110 A

347 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

27.6 A

SINGLE

S-PSSO-N4

DRAIN

8 pF

SSM6N15FE(TPL3,F)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TPC8102

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

47 mJ

6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

2.4 W

150 Cel

SILICON

.07 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

TPC8049-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TK17A25D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

153 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

17 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPC8A01(TE12L,Q)

Toshiba

SSM6J511NU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

14 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0192 ohm

14 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

570 pF

TPCA8A04-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

UNSPECIFIED

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

132 A

252 mJ

44 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0041 ohm

44 A

DUAL

S-XDSO-F5

DRAIN

Not Qualified

TK3R1P04PL

Toshiba

TPCP8010(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

1.96 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

TK7A60W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

92 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.65 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK20A60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

144 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK25A20D,S5X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

118 mJ

25 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

25 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

21 pF

2SJ239

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

.4 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

SSM6J771G

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

10 A

6

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

5 A

BOTTOM

R-PBGA-B6

NOT SPECIFIED

NOT SPECIFIED

TK33S10N1L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

99 A

101 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0162 ohm

33 A

SINGLE

R-PSSO-G2

DRAIN

145 pF

AEC-Q101

TPC8203

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

46.8 mJ

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

2SJ304

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK7A80W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.2 pF

TPCF8201(TE85L)

Toshiba

N-CHANNEL

YES

1.35 W

ENHANCEMENT MODE

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

TJ20S04M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

31 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

180 pF

AEC-Q101

TK12X53D(TE24L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TK150F04K3

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

450 A

234 mJ

150 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0021 ohm

150 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TPH7R506NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

TK650A60F

Toshiba

TPCA8087

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

168 A

407 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0023 ohm

56 A

DUAL

S-PDSO-F5

DRAIN

Not Qualified

TK20A60W,S5VX(M

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.155 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

7 pF

TK14N65W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54.8 A

231 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

13.7 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

TK5R3A06PL,S4X

Toshiba

TPCA8A11-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

105 A

159 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0046 ohm

35 A

DUAL

S-PDSO-F5

DRAIN

TK22A65X5

Toshiba

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.