Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK22A10N1,S4X(S

Toshiba

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

30

260

SK2777(Q)

Toshiba

N-CHANNEL

SINGLE

NO

65 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

TK20J60U(Q)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TK50S04K3L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

68 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.01 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

TPCC8007(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

TPH8R903NL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

78 A

23 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0089 ohm

38 A

DUAL

S-PDSO-F5

DRAIN

SSM6K24FE(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

YTF523

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.4 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

2SJ200-O

Toshiba

P-CHANNEL

SINGLE

NO

120 W

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

YTF843

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.1 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TK34A10N1,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

147 A

64 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0095 ohm

75 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

MP4704

Toshiba

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

36 W

SILICON

.44 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

TPCA8003-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

105 A

159 mJ

35 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0095 ohm

35 A

DUAL

R-PDSO-F5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM5H01TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

100 Cel

1.4 A

TPCA8A08-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

114 A

188 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0053 ohm

38 A

DUAL

S-PDSO-F5

DRAIN

TPCA8068-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

21 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

TPC8034-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

260 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0045 ohm

20 A

DUAL

R-PDSO-G8

Not Qualified

SSM5N15FE(TE85L)

Toshiba

N-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TPCA8052-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

SSM5H12TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.9 A

TJ9A10M3

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

19 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

25 mJ

9 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK13J65U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

86 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.38 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

SSM6K08FU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

TPN11003NL(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

19 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

2SJ338-Y(2-7J1B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

180 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPC8027(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

TK8A45D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

173 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.9 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

TK58E06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

268 A

158 mJ

105 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0054 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TJ40S04M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

72 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.013 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

410 pF

AEC-Q101

SSM6K32TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

MG8G4GM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

4

16 A

11

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

8 A

UPPER

R-PUFM-D11

Not Qualified

TK7P60W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

92 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.67 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

TPH3R704PC,LQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

200 A

24 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0058 ohm

118 A

DUAL

S-PDSO-F5

DRAIN

115 pF

TK7J90E

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

235 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

TPCA8051-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

28 A

TPC8002

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

157 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2.4 W

150 Cel

SILICON

.022 ohm

11 A

DUAL

R-PDSO-G8

Not Qualified

SSM6K406TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

4.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.4 A

TK20X60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

144 mJ

20 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

20 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

2SJ338O

Toshiba

P-CHANNEL

SINGLE

YES

20 W

PLASTIC/EPOXY

AMPLIFIER

180 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 A

SINGLE

R-PSSO-G2

DRAIN

e0

2SJ338(2-7B1B)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TPC8052-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TPCC8066-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

17 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

2SJ440-Y

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

9 A

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK70J04J3(Q)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

TK15S04N1L,LQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

23 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.037 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

NOT SPECIFIED

NOT SPECIFIED

TPC8201

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

32.5 mJ

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

.08 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

2SK4020

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

65 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

2SJ464

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

937 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.