Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TPCA8053-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

45 A

16 mJ

15 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

SILICON

.024 ohm

15 A

DUAL

S-PDSO-F5

DRAIN

90 pF

MP4404

Toshiba

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.44 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

TK50J60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

900 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.065 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TK1R5R04PB

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

205 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

377 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.00205 ohm

160 A

SINGLE

R-PSSO-G2

DRAIN

490 pF

AEC-Q101

TK12J55D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

317 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.57 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

TK6A65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

23.2 A

82 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1 ohm

5.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPH7R506NH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

TK9Q65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37.2 A

116 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.56 ohm

9.3 A

SINGLE

R-PSIP-T3

DRAIN

MP6403

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

36 W

150 Cel

SILICON

.2 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

NOT SPECIFIED

240

TK5A53D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

158 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK11P65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44.4 A

138 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.44 ohm

11.1 A

SINGLE

R-PSSO-G2

DRAIN

TK100F06K3(TE24L)

Toshiba

N-CHANNEL

SINGLE

YES

180 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

TK12J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

144 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

2SK694

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

SILICON

TIN LEAD

.5 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

TK42E12N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

167 A

92 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0094 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK15J60T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

118 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TPCC8084(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

SSM6K504NU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

18 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.026 ohm

9 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

42 pF

AEC-Q101

TPC8048-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

TK33S10N1Z

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

99 A

66.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0097 ohm

33 A

SINGLE

R-PSSO-G2

DRAIN

140 pF

AEC-Q101

TPCA8107-H

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

30 A

26 mJ

7.5 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.037 ohm

7.5 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e0

SSM5H06FE(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

.1 A

TK90S06N1L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

157 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

95 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0052 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

350 pF

AEC-Q101

TK60D08J1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

498 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0093 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

TPC8062-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

MG8G6EM1

Toshiba

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

SWITCHING

450 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

16 A

15

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

8 A

UPPER

R-PUFM-D15

Not Qualified

TPCC8065-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

18 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TPCP8J01

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

32 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

22 A

5.8 mJ

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80

150 Cel

SILICON

.049 ohm

5.5 A

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

YTF823

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

4 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

TPC8208(TE12L)

Toshiba

N-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

TK8S06K3L

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

16 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

30

260

TK12J60U

Toshiba

N-CHANNEL

SINGLE

NO

144 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

SSM6K516NU

Toshiba

2SK531

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

TIN LEAD

1.6 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

TPCP8004(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.68 W

ENHANCEMENT MODE

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.3 A

TPCS8208(TE12L)

Toshiba

N-CHANNEL

YES

1.1 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

TK1K2A60F,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

134 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

6.8 pF

MG30G2DM1

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

60 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.205 ohm

30 A

UPPER

R-PUFM-X8

Not Qualified

TPH5R906NH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

57 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

MP4406

Toshiba

N-CHANNEL

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

12

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

2 A

SINGLE

R-PSIP-T12

Not Qualified

3SK78

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

SSM6K517NU

Toshiba

TPC8049-H

Toshiba

Not Qualified

TK39A60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

155 A

608 mJ

38.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.065 ohm

38.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TPCA8006-H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

36 A

224 mJ

18 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.067 ohm

18 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e0

TPN14006NH

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

65 A

43 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.041 ohm

13 A

DUAL

S-PDSO-F8

DRAIN

TPCA8049-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

28 A

TPCP8006(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

1.68 W

ENHANCEMENT MODE

1

9.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.