Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
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|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
169 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.109 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
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Toshiba |
N-CHANNEL |
YES |
.15 W |
ENHANCEMENT MODE |
.18 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.18 A |
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Toshiba |
N-CHANNEL |
YES |
.15 W |
ENHANCEMENT MODE |
.1 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.1 A |
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Toshiba |
N-CHANNEL |
SINGLE |
YES |
34 W |
ENHANCEMENT MODE |
1 |
45 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
45 A |
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|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
450 A |
238 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0032 ohm |
150 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AEC-Q101 |
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|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
608 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.074 ohm |
38.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
2.4 W |
ENHANCEMENT MODE |
1 |
7 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
7 A |
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|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
124 mJ |
20 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.09 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
YES |
.3 W |
ENHANCEMENT MODE |
.25 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.25 A |
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Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
30 A |
11 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D11 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.175 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
706 mJ |
13 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.47 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
|||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
936 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.06 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
125 W |
SILICON |
.85 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
42 W |
ENHANCEMENT MODE |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
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Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
125 W |
SILICON |
TIN LEAD |
.8 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
144 A |
299 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0027 ohm |
48 A |
DUAL |
S-PDSO-F5 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
144 W |
ENHANCEMENT MODE |
1 |
12 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
12 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
30 W |
SILICON |
TIN LEAD |
2.6 ohm |
2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
1.9 W |
ENHANCEMENT MODE |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
8 A |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
.5 W |
ENHANCEMENT MODE |
1 |
1.4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
1.4 A |
|||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
550 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
317 mJ |
12 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.57 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
125 W |
ENHANCEMENT MODE |
1 |
18 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
18 A |
e0 |
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Toshiba |
N-CHANNEL |
SINGLE |
YES |
.2 W |
1 |
.03 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
.03 A |
e0 |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
YES |
.15 W |
ENHANCEMENT MODE |
.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.2 A |
||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
9 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.064 ohm |
5 A |
DUAL |
R-PDSO-F8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
40 pF |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
1582 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.018 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
|||||||||||||||||||||||||||||
|
Toshiba |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
YES |
.15 W |
ENHANCEMENT MODE |
.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.5 A |
||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
YES |
300 W |
ENHANCEMENT MODE |
1 |
150 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
150 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
40 W |
ENHANCEMENT MODE |
1 |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
4 A |
e0 |
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Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
105 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.54 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
135 A |
263 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0041 ohm |
45 A |
DUAL |
S-PDSO-F5 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
63 A |
57 mJ |
21 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0157 ohm |
21 A |
DUAL |
S-PDSO-F5 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
1 W |
ENHANCEMENT MODE |
1 |
16 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
16 A |
|||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
YES |
.5 W |
ENHANCEMENT MODE |
.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.5 A |
||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
.5 W |
ENHANCEMENT MODE |
1 |
3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
3 A |
|||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
YES |
.2 W |
ENHANCEMENT MODE |
.1 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.1 A |
||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
45 W |
ENHANCEMENT MODE |
1 |
38 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
38 A |
|||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 A |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.205 ohm |
30 A |
UPPER |
R-PUFM-X7 |
Not Qualified |
||||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
YES |
20 W |
PLASTIC/EPOXY |
AMPLIFIER |
180 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
1 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
e0 |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
30 W |
ENHANCEMENT MODE |
1 |
9.7 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
9.7 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
120 A |
92 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0104 ohm |
40 A |
DUAL |
S-PDSO-F5 |
DRAIN |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.