Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK15A50D(STA4,X

Toshiba

TK5A65DA(Q

Toshiba

TK6A45DA(Q

Toshiba

TK6A55DA(Q

Toshiba

TK750A60F,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

201 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

8.5 pF

SSM6J808R,LXGF

Toshiba

TK25N60X5,S1F

Toshiba

TK8A65D(STA4,Q

Toshiba

TK11A45D(STA4,Q

Toshiba

TK10E60W,S1VX

Toshiba

TK10P60W,RVQ

Toshiba

TK11A50D(STA4,Q

Toshiba

TK60S10N1L,LQ

Toshiba

TK9P65W,RQ

Toshiba

SSM6J808R,LF

Toshiba

TPH5R906NH,L1Q

Toshiba

TK12A55D(STA4,Q

Toshiba

TK12Q60W,S1VQ

Toshiba

TK12J60W,S1VE

Toshiba

TK90S06N1L,LQ

Toshiba

TK25V60X,LQ

Toshiba

TK7A90E,S4X

Toshiba

SSM6K504NU,LXGF

Toshiba

TK72E08N1,S1X

Toshiba

TK13A55DA(Q

Toshiba

TK39N60W,S1VF

Toshiba

TK6Q60W,S1VQ

Toshiba

TK39Z60X,S1F

Toshiba

TK7E80W,S1X

Toshiba

SSM6J771G,LF

Toshiba

TK14A65W,S5X

Toshiba

TK8Q60W,S1VQ

Toshiba

TK25E60X,S1X

Toshiba

TK7A45DA(STA4,Q

Toshiba

TK100A08N1,S4X

Toshiba

TK8Q65W,S1Q

Toshiba

TK7P60W,RVQ

Toshiba

TK14G65W5,RQ

Toshiba

TK35S04K3L,LXHQ

Toshiba

TK560A60Y,S4X

Toshiba

TK58E06N1,S1X

Toshiba

TW140N120C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.182 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

1.9 pF

TW045N120C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

182 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

114 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.059 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.2 pF

TK12A50D(STA4,X,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

364 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

12 A

SINGLE

R-PSFM-T3

6 pF

TW015N120C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

431 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.02 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

7 pF

TW027N65C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

170 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.037 ohm

58 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

6.6 pF

SSM6K504NU,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

18 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.026 ohm

9 A

DUAL

S-PDSO-N6

DRAIN

42 pF

AEC-Q101

TK8A65D(STA4,X,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

416 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.84 ohm

8 A

SINGLE

R-PSFM-T3

6 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.