Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK22E10N1,S1X

Toshiba

TK8A60W5,S5VX

Toshiba

TK430A60F,S4X

Toshiba

TK9A65W,S5X

Toshiba

TK10J80E,S1E

Toshiba

TK5P53D(T6RSS-Q)

Toshiba

TK4R3E06PL,S1X

Toshiba

TK28A65W,S5X

Toshiba

TK7A60W,S5VX

Toshiba

TK3P50D,RQ

Toshiba

TK12P60W,RVQ

Toshiba

TK14N65W,S1F

Toshiba

TK12A60D(STA4,X

Toshiba

TK7Q60W,S1VQ

Toshiba

TK20N60W,S1VF

Toshiba

TK5A65D(STA4,Q

Toshiba

TK7A60W5,S5VX

Toshiba

TK46A08N1,S4X

Toshiba

TPCA8109(TE12L1,V

Toshiba

TPCA8128,L1Q

Toshiba

TK10V60W,LVQ

Toshiba

TK13E25D,S1X

Toshiba

TK8A65W,S5X

Toshiba

TPH7R506NH,L1Q

Toshiba

TK040Z65Z,S1F

Toshiba

TK7A50D(STA4,X

Toshiba

TK9A55DA(STA4,Q

Toshiba

TK14A65W5,S5X

Toshiba

TK6A65D(STA4,Q

Toshiba

SSM6K819R,LXGF

Toshiba

TJ10S04M3L(T6L1,NQ

Toshiba

TK8A60W,S4VX

Toshiba

TPH8R903NL,LQ

Toshiba

TK12A50D(STA4,X

Toshiba

TK6R7P06PL,RQ

Toshiba

TK9A60D(STA4,Q

Toshiba

TK3A65D(STA4,Q

Toshiba

TK72A08N1,S4X

Toshiba

TK6P53D(T6RSS-Q)

Toshiba

TK7Q65W,S1Q

Toshiba

SSM6K818R,LXGF

Toshiba

TK35E08N1,S1X

Toshiba

TPCA8131,LQ

Toshiba

TK39J60W,S1VE

Toshiba

TK8A50D(STA4,X

Toshiba

SSM6J512NU,LF

Toshiba

TK12E60W,S1VX

Toshiba

TK10Q60W,S1VQ

Toshiba

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.