Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TW048N65C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

132 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

103 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.065 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4.4 pF

SSM6J507NU,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.032 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

185 pF

TW015N120C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

431 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.02 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

7 pF

SSM6K513NU,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

37.6 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

15 A

DUAL

S-PDSO-N6

DRAIN

52 pF

TW060N120C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

87 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.078 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

2.8 pF

TK6A65D(STA4,X,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

281 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.11 ohm

6 A

SINGLE

R-PSFM-T3

5 pF

TW140N120C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.182 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

1.9 pF

TK5A90E,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

202 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.1 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

8 pF

TW060N120C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

87 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.078 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

2.8 pF

TW015N65C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

342 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.021 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

12 pF

TW048N65C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

132 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

103 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.065 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4.4 pF

TW083N65C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

111 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.113 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.4 pF

TW030N120C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

249 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

166 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.04 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4.3 pF

TK12A50D(STA4,X,S)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

364 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

12 A

SINGLE

R-PSFM-T3

6 pF

TW107N65C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

76 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.145 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.7 pF

TW083N65C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

111 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.113 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.4 pF

TW030N120C

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

249 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

166 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.04 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4.3 pF

TPH9R506PL,LQ(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

81 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

150 A

25 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0095 ohm

34 A

DUAL

S-PDSO-F8

65 pF

TK39N60W,S1VF(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

155 A

608 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.065 ohm

38.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

10 pF

SSM6J801R,LF(T

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0325 ohm

6 A

DUAL

R-PDSO-F6

99 pF

TPH9R00CQ5

Toshiba

TPH8R80ANH

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

139 A

79 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0088 ohm

59 A

DUAL

S-PDSO-F5

DRAIN

TK4P60DB

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.8 A

147 mJ

3.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2 ohm

3.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK3940(F)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

2SK2992(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

2SK2089TE24R

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

80 W

SILICON

2.4 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2719

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

295 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

4.3 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3625(2-10S1B)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

488 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.082 ohm

25 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

2SK1930(TO-220SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.8 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2311(2-10S2B)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

25 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2057

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 W

SILICON

TIN LEAD

.29 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK945STA1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

10 W

SILICON

5 ohm

1 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

2SK357

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

40 W

SILICON

TIN LEAD

.9 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

2SK1865(2-10S1B)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.7 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

2SK3131

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

525 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3473(Q)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

2SK3399(2-10S1B)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

363 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK31J60W5(F)

Toshiba

N-CHANNEL

SINGLE

NO

230 W

ENHANCEMENT MODE

1

30.8 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

30.8 A

2SK2231TE16R

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

.3 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

2SK2013-Y

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SK2013-O

Toshiba

N-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

AMPLIFIER

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

SILICON

1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TPH4R50ANH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

SSM3K124TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

2.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

2SK2398(Q)

Toshiba

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

SSM3K303T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.9 A

2SK2837

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

SSM3K01T(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

2SK2968

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

810 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

TIN LEAD

1.25 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.