Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK17E65W,S1X

Toshiba

TK14A55D(STA4,Q

Toshiba

TK13A50D(STA4,X

Toshiba

TK19A45D(STA4,Q

Toshiba

2SC2712-GR,RXGF

Toshiba

TPCA8120,L1Q

Toshiba

TK10A60W5,S5VX

Toshiba

TK7A55D(STA4,Q

Toshiba

TK100A06N1,S4X

Toshiba

TK20V60W,LVQ

Toshiba

TK065Z65Z,S1F

Toshiba

TK14N65W5,S1F

Toshiba

TK62N60W,S1VF

Toshiba

TK60S06K3L,LXHQ

Toshiba

TK7A65D(STA4,Q

Toshiba

TK12A53D(STA4,X

Toshiba

TK20A60W5,S5VX

Toshiba

TK7R2E10PL,S1X

Toshiba

TK5A55D(STA4,Q

Toshiba

TPN14006NH,L1Q

Toshiba

TK290A60Y,S4X

Toshiba

TK33S10N1H,LQ

Toshiba

TK62N60W5,S1VF

Toshiba

TK5R1E06PL,S1X

Toshiba

TK8R2A06PL,S4X

Toshiba

TPN7R506NH,L1Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

135 A

105 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

53 A

DUAL

S-PDSO-F8

1

DRAIN

NOT SPECIFIED

260

58 pF

TK6A50D(STA4,Q

Toshiba

TK30E06N1,S1X

Toshiba

TK3R1A04PL,S4X

Toshiba

TK11A55D(STA4,Q

Toshiba

TK7A65W,S5X

Toshiba

TK56A12N1,S4X

Toshiba

SSM6P69NU,LXGF

Toshiba

TK090N65Z,S1F

Toshiba

TK5A53D(STA4,Q

Toshiba

TK25A60X,S5X

Toshiba

TK8R2E06PL,S1X

Toshiba

TK13A45D(STA4,Q

Toshiba

TK9Q65W,S1Q

Toshiba

TK560A65Y,S4X

Toshiba

TK8A45D(STA4,Q

Toshiba

TK18A50D(STA4,Q

Toshiba

TK35N65W,S1F

Toshiba

TK65E10N1,S1X

Toshiba

TK72A12N1,S4X

Toshiba

SSM6P49NU,LF

Toshiba

TK10A50D(STA4,X

Toshiba

SSM6J808R,LXHF

Toshiba

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.