Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI4850EY	Vishay Intertechnology	N-CHANNEL	SINGLE		1.7 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							6 A			1
SI5936DU-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	25 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.03 ohm	6 A	DUAL	R-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SI7434DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.2 W	UNSPECIFIED	SWITCHING	250 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	40 A	8.4 mJ	2.3 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.155 ohm	2.3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIHB24N80AE-GE3	Vishay Intertechnology
SIHP28N65E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	691 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.122 ohm	28 A	SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SIR870BDP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ	81 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	98 ns		.0077 ohm	81 A	DUAL	R-PDSO-F5		DRAIN							19 pF
SUD20N10-66L-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	11.25 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.066 ohm	16.9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
SUM110N06-05L	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		110 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.0052 ohm	110 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e0
SUM110N06-05L-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	230 W						ENHANCEMENT MODE	1			110 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel							110 A
IRFBC30ASTRR	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	290 mJ	3.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1 ohm	5.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
IRLZ14SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.2 ohm	10 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
SIA444DJT-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.017 ohm	12 A	DUAL	S-PDSO-N3		DRAIN	Not Qualified			e3		260
SIHB065N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	116 A	226 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	148 ns	-55 Cel	134 ns		.065 ohm	40 A	SINGLE	R-PSSO-G2				AVALANCHE RATED	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	5 pF
SIR632DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69.5 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	31.2 mJ	29 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	56 ns	-55 Cel	66 ns		.041 ohm	29 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	8.5 pF
SISS61DN-T1-GE3	Vishay Intertechnology																																			NOT SPECIFIED	NOT SPECIFIED
IRF830SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	280 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.5 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3
IRF9640LPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.5 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRFP350	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	390 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.3 ohm	16 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-247AC	e0
IRFR120PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	210 mJ	8.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.27 ohm	7.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260	34 pF
IRLR024TRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	91 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.1 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA		NOT SPECIFIED	NOT SPECIFIED
IRLZ14PBF	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRLZ14STRLPBF	Vishay Intertechnology
SI5922DU-T1-GE3	Vishay Intertechnology																																			NOT SPECIFIED	NOT SPECIFIED
SI7370DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.2 W	UNSPECIFIED	SWITCHING	60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	125 mJ	9.6 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.011 ohm	9.6 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	FAST SWITCHING		e3	20	260
SI9945AEY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A		3.7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.08 ohm	3.7 A	DUAL	R-PDSO-G8	1					e3	30	260
SIA430DJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0135 ohm	12 A	DUAL	S-XDSO-N3		DRAIN	Not Qualified			e3		260
SIHB35N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	691 mJ	32 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	150 ns	-55 Cel	181 ns		.094 ohm	32 A	SINGLE	R-PSSO-G2				AVALANCHE RATED	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	5 pF
SIHG17N80AEF-GE3	Vishay Intertechnology
SIHG20N50C-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	292 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	361 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.27 ohm	20 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AC		40	260
SIR186DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.25 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	64 ns	-55 Cel	46 ns		.0045 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	29 pF
SQD45P03-12_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	48 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.012 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SQJ416EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	26 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.03 ohm	27 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SUD50P04-13L-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	80 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.013 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
IRFZ48SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	190 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.018 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRL620SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.8 ohm	5.2 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
IRLZ14STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	68 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.2 ohm	10 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
SI2328DS-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			1.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		1.15 A								e0
SI5415AEDU-T1-GE3	Vishay Intertechnology																								PURE MATTE TIN					1
SI5476DU-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	25 A	11.2 mJ	12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.034 ohm	12 A	DUAL	R-XDSO-N3	1	DRAIN	Not Qualified			e3
SI7336ADP-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	5.4 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		30 A								e0
SI7336ADP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A		30 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.003 ohm	30 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
SIHG14N50D-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	56 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.4 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AC		NOT SPECIFIED	NOT SPECIFIED
SIR664DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	150 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.006 ohm	60 A	DUAL	R-PDSO-C5		DRAIN
SQ2319ES-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	1.8 mJ	3.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.082 ohm	3.3 A	DUAL	R-PDSO-G3			Not Qualified		TO-236		40	260
SQD70140EL_GE3	Vishay Intertechnology																								MATTE TIN					1					e3	30	260
SQJ415EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	31.2 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	30 ns	-55 Cel	140 ns		.014 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN							320 pF	AEC-Q101
SQS484ENW-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	64 A	31.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0105 ohm	16 A	DUAL	S-PDSO-F5		DRAIN								AEC-Q101
BF998	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, DEPLETION MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.