Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BF998B-GS08	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, DEPLETION MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.03 A
IRF510STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.54 ohm	5.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
IRF644STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	550 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.28 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRF644STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	550 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.28 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
IRF840LCSPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	28 A	510 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.85 ohm	8 A	SINGLE	S-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRF9540STRL	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	640 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.2 ohm	19 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e0
IRF9540STRR	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	640 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.2 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED
IRFD420PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	51 mJ	.37 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	3 ohm	.37 A	DUAL	R-PDIP-T3		DRAIN	Not Qualified			e3	40	260
IRFL014TRPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	100 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.2 ohm	2.7 A	DUAL	R-PDSO-G4		DRAIN			TO-261AA		NOT SPECIFIED	NOT SPECIFIED	29 pF
IRFP264N	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	44 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	170 A	520 mJ	44 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.06 ohm	44 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-247AC		NOT SPECIFIED	NOT SPECIFIED
IRFP9140	Vishay Intertechnology	P-CHANNEL	SINGLE	NO	180 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	960 mJ	21 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.2 ohm	21 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e0
IRFR120PBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.27 ohm	7.7 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				34 pF
IRFR9214TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	100 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	3 ohm	2.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IRFZ24SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.1 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRFZ44STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRLR014TRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	27.4 mJ	7.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.2 ohm	7.7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252		40	260
IRLZ24PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	64.1 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.1 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SI4542DY-T1-E3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		6.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
SI4880DY-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
SI5504BDC-T1-GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.12 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.065 ohm	4 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260
SI6415DQ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.019 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SI7322DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	18 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	3.8 W	150 Cel	SILICON	30 ns	-55 Cel	35 ns	MATTE TIN	.058 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	25 pF
SI7790DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0045 ohm	50 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIA413ADJ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	165 ns		.029 ohm	12 A	DUAL	S-PDSO-N6		DRAIN						260	390 pF
SIA431DJ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	-20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	-30 A		-12 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	75 ns	-55 Cel	140 ns	MATTE TIN	.025 ohm	12 A	DUAL	S-PDSO-N4		DRAIN	Not Qualified			e3		260
SIDR622DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	80 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0177 ohm	56.7 A	DUAL	R-PDSO-N5	1	DRAIN				e3		260
SIDR638DP-T1-GE3	Vishay Intertechnology																									TIN					1					e3		260
SIHFR430ATR-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SIHFR430ATRL-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SIHFR9024TR-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
SIR167DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	20 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	106 ns		.0055 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	460 pF
SIR188DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65.7 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.25 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	38 ns	-55 Cel	56 ns		.0049 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	26 pF
SIR872DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	45 mJ	53.7 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.018 ohm	53.7 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
SISH407DN-T1-GE3	Vishay Intertechnology																																				NOT SPECIFIED	NOT SPECIFIED
SIZ340DT-T1-GE3	Vishay Intertechnology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	100 A	5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.0095 ohm	26.5 A	DUAL	S-PDSO-N8	1	DRAIN SOURCE
SQJ465EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	20 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.085 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SQJ886EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	64 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0045 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SUD15N15-95-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.095 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SUD45P03-10-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.018 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
SUD50P04-13L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	93.7 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	80 mJ	60 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.013 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SUP70090E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	80 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					.0089 ohm	50 A	SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED
BF998R	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, DEPLETION MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.03 A
IRF740STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	520 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.55 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRF820SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	210 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRF830BPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	104 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	28.8 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	46 ns	-55 Cel	50 ns	MATTE TIN OVER NICKEL	1.5 ohm	5.3 A	SINGLE	R-PSFM-T3					TO-220AB	e3			6 pF
IRF9640L	Vishay Intertechnology	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					.5 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFBC40PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	570 mJ	6.2 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1.2 ohm	6.2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			30 pF
IRFIB5N65APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	325 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.93 ohm	5.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.