Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQ7415AENW	Vishay Intertechnology
SQ7415AENW-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	64 A	26 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	28 ns	-55 Cel	68 ns		.065 ohm	16 A	DUAL	S-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	105 pF	AEC-Q101
SQ7415EN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	1	30 A		3.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.065 ohm	3.6 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3
SQD70140EL	Vishay Intertechnology
SQJ423EP-T1_BE3	Vishay Intertechnology
SQJ963EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	25 A	20 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.085 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SQJA20EP-T1_BE3	Vishay Intertechnology
SQJQ144AE-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	600 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1800 A	180 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	68 ns	-55 Cel	89 ns		.0009 ohm	575 A	SINGLE	R-PSSO-G4		DRAIN							220 pF	AEC-Q101
SQJQ144AER-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	600 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1800 A	180 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	68 ns	-55 Cel	89 ns		.0009 ohm	575 A	DUAL	R-PDSO-G5		DRAIN					40	260	220 pF	AEC-Q101
SQM110N05-06L_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	443 A	186 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.006 ohm	110 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3
SQS460EN-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	32 A	16 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	20 ns	-55 Cel	40 ns		.036 ohm	8 A	DUAL	S-PDSO-F8		DRAIN	Not Qualified				40	240	65 pF	AEC-Q101
SUB40N06-25L	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Tin/Lead (Sn/Pb)		40 A								e0
SUD23N06-31L-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.031 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
SUD80460E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	31.25 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0447 ohm	18.1 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
SUM40N10-30-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A		40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.03 ohm	40 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3
SUP75P03-07-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	187 W	PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A		75 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.007 ohm	75 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e3
SUP85N03-3M6P-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78.1 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	101 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0036 ohm	85 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e3
VQ1001P-E3	Vishay Intertechnology	N-CHANNEL		NO	2 W						ENHANCEMENT MODE				.83 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel							.83 A
IRF510L	Vishay Intertechnology	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					.54 ohm	5.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRF644	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	125 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.28 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
IRF740ASTRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	630 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.55 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRF830AS	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	230 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.4 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
IRF830ASTRL	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	230 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
IRF840BPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	56 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	58 ns	-55 Cel	56 ns		.85 ohm	8.7 A	SINGLE	R-PSFM-T3					TO-220AB				8 pF
IRFB13N50APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	560 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.45 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRFI9540GPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	600 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.2 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260	140 pF
IRFPS37N50APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	446 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	144 A	1260 mJ	36 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.13 ohm	36 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3	30	260
IRFR014TRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	47 mJ	7.7 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.2 ohm	7.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRFR220TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	230 mJ	4.8 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				PURE MATTE TIN	.8 ohm	4.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252		30	260
IRFR9210PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A	300 mJ	2 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	3 ohm	1.9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IRFR9214TR	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	100 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3 ohm	2.7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
IRFRC20	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	450 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	4.4 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
IRL640STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	580 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.18 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
SI2302DS	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		2.8 A								e0
SI4480EY-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			6.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Tin/Lead (Sn/Pb)		6.2 A								e0
SI5476DU-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	31 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							12 A
SI7414DN-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		5.6 A								e0
SI7454DP-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	4.8 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		5 A								e0
SI7454DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4.8 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	31 mJ	5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.034 ohm	5 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7478DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	60 A	61 mJ	15 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.0075 ohm	15 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified				30	260
SI7483ADP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	60 A		14 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0057 ohm	14 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3
SI7949DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	25 A	24.2 mJ	3.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SI7960DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	40 A	27 mJ	6.2 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.021 ohm	6.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
SI9801DY	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.055 ohm	4.5 A	DUAL	R-PDSO-G8						e0
SIB456DK-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	7 A	.29 mJ	6.3 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	30 ns	-55 Cel	40 ns	TIN	.185 ohm		DUAL	S-PDSO-N6	1	DRAIN				e3		260	10 pF
SIDR680DP-T1-GE3	Vishay Intertechnology																								TIN					1					e3		260
SIHB24N65E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	250 W							1			24 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel							24 A
SIHB33N60ET1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	793 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.099 ohm	33 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.