Vishay Intertechnology - SIB456DK-T1-GE3

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SIB456DK-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIB456DK-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 13 W; Package Style (Meter): SMALL OUTLINE; Maximum Turn Off Time (toff): 40 ns;
Datasheet SIB456DK-T1-GE3 Datasheet
In Stock67,421
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 30 ns
Maximum Pulsed Drain Current (IDM): 7 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 13 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 40 ns
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .185 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): .29 mJ
Maximum Feedback Capacitance (Crss): 10 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 6.3 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
67,421 $0.143 $9,641.203

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