Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQD50N04-09H-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83.3 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	76 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.009 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SQJ148EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	6 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.033 ohm	14 A	SINGLE	R-PSSO-G4		DRAIN								AEC-Q101
SQJ409EP-T1_BE3	Vishay Intertechnology
SQJ951EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	120 A	36.5 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.017 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN
SQJQ900E-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	400 A	125 mJ	100 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	45 ns	-55 Cel	90 ns		.0039 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN							330 pF	AEC-Q101
SQM120P04-04L-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	330 A	320 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.004 ohm	120 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		40	260
SQS481ENW-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		150 V	FLAT	SQUARE	ENHANCEMENT MODE	1	19 A	.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	13.3 ns	-55 Cel	25.3 ns		1.095 ohm	4.7 A	DUAL	S-PDSO-F8		DRAIN							13 pF
SQSA70CENW-T1_GE3	Vishay Intertechnology
SUB45N05-20L-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	3.75 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Matte Tin (Sn) - with Nickel (Ni) barrier		45 A			1					e3
SUB75N03-04-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	187 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Matte Tin (Sn) - with Nickel (Ni) barrier		75 A			1					e3
SUM110N04-03-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	437.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A		110 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.0028 ohm	110 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3
SUP60N02-4M5P-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY		20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	125 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				PURE MATTE TIN	.0065 ohm	60 A	SINGLE	R-PSFM-T3	1	DRAIN			TO-220AB
IRF240	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	125 W	METAL	SWITCHING	200 V	WIRE	ROUND	ENHANCEMENT MODE	1	72 A		18 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	30 ns	-55 Cel	80 ns		.18 ohm	18 A	BOTTOM	O-MBFM-P2		DRAIN			TO-204AE				220 pF
IRF610PBF-BE3	Vishay Intertechnology
IRF644PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	550 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.28 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRF644PBF-BE3	Vishay Intertechnology
IRF644S	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	550 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.28 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
IRF720SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	190 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	1.8 ohm	3.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRF740ASTRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	630 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.55 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRF830ASTRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	230 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRF840ASTRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.85 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRF9510STRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	1.2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRF9520PBF-BE3	Vishay Intertechnology
IRF9520SPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	300 mJ	6.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.6 ohm	6.8 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRF9530S	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.3 ohm	12 A	SINGLE	R-PSSO-G2	1		Not Qualified					225
IRF9540S	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	640 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.2 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e0
IRFB9N65APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	325 mJ	8.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.93 ohm	8.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRFBF30STRLPBF	Vishay Intertechnology																								Tin (Sn)										e3
IRFI9Z34GPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	370 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.14 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260
IRFIB5N65A	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	325 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.93 ohm	5.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE		e0
IRFL214TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.3 A	50 mJ	.79 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	2 ohm	.79 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3			9.6 pF
IRFP450N	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	170 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.37 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED
IRFP460NPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	340 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.24 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3	30	260
IRFR120TRLPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Pure Matte Tin (Sn) - annealed	.27 ohm	7.7 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA		30	260	34 pF
IRFR220	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A	230 mJ	4.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.8 ohm	4.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AA	e0
IRFR220PBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.8 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.8 ohm	4.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRFR320PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	160 mJ	3.1 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Pure Matte Tin (Sn) - annealed	1.8 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA		30	260
IRFR320PBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	160 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			1.8 ohm	3.1 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				47 pF
IRFR420TRPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			3 ohm	2.4 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				37 pF
IRFR9024	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
IRFR9310PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	92 mJ	1.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	7 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
IRFZ48PBF	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	190 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.018 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRL620PBF-BE3	Vishay Intertechnology
IRLU9343PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	AMPLIFIER	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	120 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.105 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3
IRLZ24LPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	110 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.1 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA		40	260
IRLZ34SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	220 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.05 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e3
SD5401CY	Vishay Intertechnology	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE				.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							.05 A
SI2302ADS	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			2.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2.1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.