Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SIHD2N80AE-GE3

Vishay Intertechnology

SIHG73N60E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

236 A

2030 mJ

73 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

73 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

SIHP17N80AEF-GE3

Vishay Intertechnology

SIJH800E-T1-GE3

Vishay Intertechnology

40

260

SIR450DP-T1-RE3

Vishay Intertechnology

SIR462DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41.7 W

UNSPECIFIED

SWITCHING

30 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

70 A

48 mJ

30 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0079 ohm

18.9 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

40

260

SIS478DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15.6 W

PLASTIC/EPOXY

SWITCHING

30 V

C BEND

SQUARE

ENHANCEMENT MODE

1

40 A

5 mJ

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.02 ohm

12 A

DUAL

S-PDSO-C5

DRAIN

Not Qualified

e3

40

260

SISH434DN-T1-GE3

Vishay Intertechnology

NOT SPECIFIED

NOT SPECIFIED

SQ3426EV-T1-GE3

Vishay Intertechnology

TIN

1

e3

10

260

SQA403EJ-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

11.25 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

57 ns

-55 Cel

40 ns

Tin (Sn)

.02 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

e3

227 pF

SQD40N04-10A-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

45 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.014 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

SQD50N10-8M9L_GE3

Vishay Intertechnology

MATTE TIN

1

e3

30

260

SQJA00EP-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

26.5 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

35 ns

-55 Cel

80 ns

.013 ohm

25.6 A

SINGLE

R-PSSO-G4

DRAIN

40 pF

AEC-Q101

SUD40N10-25

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

80 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.025 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e0

SUM70090E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

80 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0089 ohm

50 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

260

SUP50010E-GE3

Vishay Intertechnology

NOT SPECIFIED

NOT SPECIFIED

SUP85N10-10

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

280 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0105 ohm

85 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

SUP85N10-10P-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

180 mJ

85 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.01 ohm

85 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

VN10KM

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

.31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.31 A

IRF820APBF-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

140 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3 ohm

2.5 A

SINGLE

R-PSFM-T3

TO-220AB

2.7 pF

IRFBE30

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.1 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

4.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRFBE30STRLPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

260 mJ

4.1 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

3 ohm

4.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

SI3900DV-T1

Vishay Intertechnology

N-CHANNEL

YES

1.15 W

ENHANCEMENT MODE

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

SI4431BDY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

5.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

40 ns

-55 Cel

180 ns

MATTE TIN

.03 ohm

5.7 A

DUAL

R-PDSO-G8

1

e3

IEC61249-2-21

SI7434ADP-T1-RE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

54.3 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

25 A

7.2 mJ

12.3 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

51 ns

-55 Cel

65 ns

.15 ohm

12.3 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

2 pF

SIHH240N60E-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

81 mJ

12 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

58 ns

-55 Cel

80 ns

.24 ohm

12 A

SINGLE

S-PSSO-N4

DRAIN

5 pF

SIR576DP-T1-RE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71.4 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

12.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

48 ns

-55 Cel

78 ns

.017 ohm

42.2 A

DUAL

R-PDSO-F8

DRAIN

6.1 pF

SIRA50DP-T1-RE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

101 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

58 ns

-55 Cel

126 ns

.001 ohm

100 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

110 pF

SI7120ADN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

40 A

24 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Pure Matte Tin (Sn) - annealed

.021 ohm

6 A

DUAL

S-PDSO-C5

1

DRAIN

Not Qualified

30

260

SIRA60DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

80 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

100 ns

MATTE TIN

.00094 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

191 pF

SIR4606DP-T1-GE3

Vishay Intertechnology

SIR170DP-T1-RE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

61.2 mJ

95 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

38 ns

-55 Cel

102 ns

.0048 ohm

95 A

DUAL

R-PDSO-F5

DRAIN

40

260

20 pF

SQ2315ES-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

6 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

55 ns

-55 Cel

62 ns

.05 ohm

5 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

40

260

240 pF

IRF720PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13 A

190 mJ

3.3 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.8 ohm

3.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

SIZ710DT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

48 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

70 A

20 mJ

35 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0068 ohm

16 A

DUAL

R-XDSO-N6

DRAIN

Not Qualified

e3

40

260

SQ3457EV-T1_GE3

Vishay Intertechnology

Not Qualified

40

260

SI4488DY-T1-GE3

Vishay Intertechnology

3.5 A

FET General Purpose Powers

Pure Matte Tin (Sn) - annealed

1

Not Qualified

30

260

SQ2310ES-T1_BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

5 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

23 ns

-55 Cel

46 ns

MATTE TIN

.03 ohm

6 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

46 pF

SUM70042E-GE3

Vishay Intertechnology

IRFS11N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

275 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.52 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

IRFSL11N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

390 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.55 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

SIDR170DP-T1-RE3

Vishay Intertechnology

SISA72ADN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

150 A

11.25 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

44 ns

-55 Cel

80 ns

.00466 ohm

92 A

DUAL

S-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

19 pF

IRF710PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

120 mJ

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

3.6 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

SIHG039N60E-GE3

Vishay Intertechnology

NOT SPECIFIED

NOT SPECIFIED

SIHG039N60EF-GE3

Vishay Intertechnology

SIR410DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

60 A

61 mJ

35 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0048 ohm

23 A

DUAL

R-XDSO-C5

DRAIN

Not Qualified

e3

SIS888DN-T1-GE3

Vishay Intertechnology

MATTE TIN

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.