Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFR9024NTRRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

62 mJ

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

.175 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

30

260

IRFZ24NHR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.07 ohm

17 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-220AB

e0

IRLML2246TRPBF-1

Infineon Technologies

1

MSC750SMA170S

Microchip Technology

MTD3055VLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

72 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

NTTFS5820NLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

149 A

48 mJ

37 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0115 ohm

11 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NVBG025N065SC1

Onsemi

NVH4L020N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

408 A

264 mJ

102 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

69 ns

-55 Cel

86 ns

Matte Tin (Sn) - annealed

.028 ohm

102 A

SINGLE

R-PSFM-T4

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

24 pF

AEC-Q101

TN2524N8-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

.36 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ns

-55 Cel

40 ns

MATTE TIN

6 ohm

.36 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

TO-243AA

e3

25 pF

BSC150N03LDGATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

10 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.022 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

CMT2N7002G

Champion Microelectronic

N-CHANNEL

SINGLE

YES

.225 W

ENHANCEMENT MODE

1

.115 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.115 A

DMP4065S-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.08 ohm

2.4 A

DUAL

R-PDSO-G3

1

e3

30

260

40 pF

FDWS9508L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

211 mJ

80 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

23 ns

-55 Cel

780 ns

MATTE TIN

.0085 ohm

80 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240

e3

30

260

AEC-Q101

IRFB3607PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

310 A

120 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.009 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFR024NTR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

38 W

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.075 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e0

30

245

IRFR15N20DTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

260 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.165 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRFU7440PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

760 A

376 mJ

180 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0024 ohm

90 A

SINGLE

R-PSIP-T3

1

DRAIN

TO-251AA

PJA3406_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.048 ohm

4.4 A

DUAL

R-PDSO-G3

e3

40

260

SI4143DY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

45 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

179 ns

-55 Cel

128 ns

MATTE TIN

.0062 ohm

25.3 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

710 pF

SPP80P06PHXKSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

823 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.023 ohm

91 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STD4NK80ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

190 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

3.5 ohm

3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

STH6N95K5-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.25 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

245

BSC430N25NSFDATMA1

Infineon Technologies

Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

FDB0105N407L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2540 A

1109 mJ

460 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

183 ns

-55 Cel

283 ns

Matte Tin (Sn) - annealed

.0008 ohm

460 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

1365 pF

FDMC010N08C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

206 A

96 mJ

51 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

29 ns

-55 Cel

41 ns

Matte Tin (Sn) - annealed

.01 ohm

51 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

30 pF

FDMC8296

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

72 mJ

44 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.008 ohm

12 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e4

30

260

FDN5632N_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.1 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

1.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FDN5632N-F085

Onsemi

N-CHANNEL

SINGLE

YES

1.1 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

1.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

FDP20N50

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1110 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

FDS9934C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

6.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

IRFB260NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

450 mJ

56 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.04 ohm

56 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NTD6415ANLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

79 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.056 ohm

23 A

DUAL

R-PDSO-G2

1

DRAIN

Not Qualified

e3

30

260

70 pF

NTHD3100CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

12 A

3.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.08 ohm

2.9 A

DUAL

R-XDSO-C8

1

Not Qualified

e3

30

260

NVTFS6H850NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

300 A

271 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0095 ohm

11 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

SPP08P06PHXK

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35.2 A

70 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

8.8 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

STP7NK80ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20.8 A

210 mJ

5.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

5.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

UJ4SC075006K4S

United Silicon Carbide

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

PLASTIC/EPOXY

SWITCHING

750 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

588 A

316 mJ

4

FLANGE MOUNT

JUNCTION CASCODE

175 Cel

SILICON CARBIDE

-55 Cel

.0074 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

4 pF

CAS300M12BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0567 ohm

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

113 pF

FDD8444

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

227 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

535 mJ

17.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

5.2 ohm

155 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FQPF4N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

47 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

570 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.2 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPB034N06L3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

165 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0034 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB042N10N3GXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0042 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

IRF630SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

74 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

250 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

IRFD9014PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1.3 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

140 mJ

1.1 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.5 ohm

1.1 A

DUAL

R-PDIP-T3

Not Qualified

e3

40

260

IRFR9014TRPBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

140 mJ

5.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

5.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252

e3

30

260

IRLL3303TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

37 A

140 mJ

6.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

4.6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e3

30

260

170 pF

LMG3422R050RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.055 ohm

QUAD

S-PQCC-N54

3

e4

30

260

NDD60N900U1T4G

Onsemi

N-CHANNEL

SINGLE

YES

74 W

1

5.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.9 A

1

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.