FDN5632N_F085 by Fairchild Semiconductor | Transistors

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Manufacturer	Fairchild Semiconductor
Manufacturer's Part Number	FDN5632N_F085
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain Current (Abs) (ID): 1.7 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	FDN5632N_F085 Datasheet
In Stock	74,945

NAME	DESCRIPTION
Other Names:	FDN5632N_F085TR FDN5632N_F085DKR FDN5632N_F085CT-ND FDN5632N_F085TR-ND FDN5632N_F085 FDN5632N-F085CT FDN5632N-F085TR FDN5632NF085 FDN5632N-F085DKR FDN5632N_F085DKR-ND FDN5632N_F085CT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.7 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	1.7 A
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
74,945	-	-

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