Fairchild Semiconductor - FDN5632N_F085

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FDN5632N_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDN5632N_F085
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain Current (Abs) (ID): 1.7 A; Package Body Material: PLASTIC/EPOXY;
Datasheet FDN5632N_F085 Datasheet
In Stock74,945
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.7 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.7 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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