NO RF Power Bipolar Junction Transistors (BJT) 222

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2SC1765

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

FLANGE MOUNT

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC4200

Toshiba

NPN

SINGLE

NO

2500 MHz

1.5 W

.6 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5 W

20

150 Cel

5 pF

SILICON

18 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC1001

Toshiba

NPN

SINGLE

NO

.5 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

10 pF

SILICON

20 V

TIN LEAD

BOTTOM

O-MBCY-W3

EMITTER

Not Qualified

TO-39

e0

2SC2099

Toshiba

NPN

SINGLE

NO

100 MHz

60 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

175 Cel

250 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2379

Toshiba

NPN

SINGLE

NO

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

25 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2117

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC2181

Toshiba

NPN

SINGLE

NO

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

160 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2101

Toshiba

NPN

SINGLE

NO

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2173

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2103A

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC1169

Toshiba

NPN

SINGLE

NO

1 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

10 pF

SILICON

20 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC2319

Toshiba

NPN

SINGLE

NO

2900 MHz

.35 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

4.2 pF

SILICON

15 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2102

Toshiba

NPN

SINGLE

NO

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

80 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2178

Toshiba

NPN

SINGLE

NO

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

80 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC4001-AZ

Renesas Electronics

NPN

SINGLE

NO

300 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

Other Transistors

60

150 Cel

3.5 pF

SILICON

250 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

10

260

2SA1546-AZ

Renesas Electronics

PNP

SINGLE

NO

300 MHz

7 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

Other Transistors

60

150 Cel

3.7 pF

SILICON

250 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

10

260

2SC3218-M

Renesas Electronics

NPN

SINGLE

NO

160 W

15 A

1

Other Transistors

20

200 Cel

2SC4001-K

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SC5023B

Renesas Electronics

NPN

SINGLE

NO

1000 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6 pF

SILICON

100 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SC5023C

Renesas Electronics

NPN

SINGLE

NO

1000 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6 pF

SILICON

100 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SC4001-L

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SC4001-M-AZ

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC4001-K-AZ

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC4001-M

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SC892

Renesas Electronics

NPN

SINGLE

NO

18 W

1.2 A

1

Other Transistors

175 Cel

2SC5390

Renesas Electronics

NPN

SINGLE

NO

1400 MHz

1.4 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30

150 Cel

3.5 pF

SILICON

110 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-126

2SC4001-L-AZ

Renesas Electronics

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

3.5 pF

SILICON

250 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC5023

Renesas Electronics

NPN

SINGLE

NO

1000 MHz

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6 pF

SILICON

100 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

KSC5034

Samsung

NPN

SINGLE

NO

800 MHz

10 W

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

40

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

Not Qualified

TO-126

KSC5035

Samsung

NPN

SINGLE

NO

500 MHz

8 W

.3 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

40

150 Cel

SILICON

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-126

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.