NO RF Power Bipolar Junction Transistors (BJT) 222

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2N3866

Microchip Technology

NPN

SINGLE

NO

800 MHz

.4 A

METAL

AMPLIFIER

1 V

10 dB

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

10

3.5 pF

SILICON

30 V

BOTTOM

O-MBCY-W3

TO-39

2N3866A

Microchip Technology

NPN

SINGLE

NO

800 MHz

.4 A

METAL

AMPLIFIER

1 V

10 dB

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

25

3.5 pF

SILICON

30 V

BOTTOM

O-MBCY-W3

TO-39

BLW32

NXP Semiconductors

NPN

SINGLE

NO

3500 MHz

10.8 W

.65 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10.8 W

20

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLW77

NXP Semiconductors

NPN

SINGLE

NO

320 MHz

245 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

C3-28

Asi Semiconductor

NPN

SINGLE

NO

600 MHz

10 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

200 Cel

7 pF

SILICON

RADIAL

O-CRPM-F4

Not Qualified

SD1726

STMicroelectronics

NPN

SINGLE

NO

233 W

20 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

18

200 Cel

220 pF

SILICON

55 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLW96

NXP Semiconductors

NPN

SINGLE

NO

245 MHz

340 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC2290

Toshiba

NPN

SINGLE

NO

100 MHz

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11.8 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2652

Toshiba

NPN

SINGLE

NO

100 MHz

300 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

300 W

10

175 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

Not Qualified

2N5641

STMicroelectronics

NPN

SINGLE

NO

300 MHz

15 W

1 A

UNSPECIFIED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

5

200 Cel

15 pF

SILICON

35 V

RADIAL

O-XRPM-F4

2SC2510

Toshiba

NPN

SINGLE

NO

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12.2 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2N3632

Texas Instruments

NPN

SINGLE

NO

175 MHz

23 W

3 A

CERAMIC, METAL-SEALED COFIRED

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

POST/STUD MOUNT

Other Transistors

5

200 Cel

25 pF

SILICON

40 V

UPPER

O-CUPM-P3

Not Qualified

TO-60

MRF221

Motorola

NPN

SINGLE

NO

175 MHz

31 W

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.3 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

5

175 Cel

85 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

MRF224

Motorola

NPN

SINGLE

NO

80 W

7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

80 W

5

175 Cel

200 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

MRF232

Motorola

NPN

SINGLE

NO

20 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

150 Cel

55 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

MRF240A

Motorola

NPN

SINGLE

NO

100 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

150 Cel

125 pF

SILICON

16 V

RADIAL

O-CRFM-F4

Not Qualified

MRF492A

Motorola

NPN

SINGLE

NO

50 MHz

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

150 Cel

450 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRPM-F4

Not Qualified

e0

MRF660

Motorola

NPN

SINGLE

NO

25 W

2.4 A

PLASTIC/EPOXY

AMPLIFIER

5.4 dB

THROUGH-HOLE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

FLANGE MOUNT

Other Transistors

20

150 Cel

25 pF

SILICON

16 V

TIN LEAD

SINGLE

R-PSFM-T3

EMITTER

Not Qualified

TO-220AB

e0

2N4128

Texas Instruments

NPN

SINGLE

NO

400 MHz

40 W

5 A

UNSPECIFIED

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

175 Cel

18 pF

SILICON

40 V

RADIAL

R-XRPM-F4

Not Qualified

TO-117

2N4440

Texas Instruments

NPN

SINGLE

NO

400 MHz

11 W

1.5 A

METAL

WIRE

ROUND

1

3

POST/STUD MOUNT

Other Transistors

10

175 Cel

SILICON

40 V

UPPER

O-MUPM-W3

Not Qualified

TO-60

2SA1403D

Onsemi

PNP

SINGLE

NO

800 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-126

2SC3952D

Onsemi

NPN

SINGLE

NO

700 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

70 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

MC3346P

Onsemi

NPN

COMPLEX

NO

550 MHz

.05 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

5

14

IN-LINE

SILICON

15 V

TIN LEAD

DUAL

R-PDIP-T14

Not Qualified

e0

2SA1537D

Onsemi

PNP

SINGLE

NO

700 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

70 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

2SA1403E

Onsemi

PNP

SINGLE

NO

800 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-126

2SC3597E

Onsemi

NPN

SINGLE

NO

800 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-126

2SC3597D

Onsemi

NPN

SINGLE

NO

800 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-126

SD1455

STMicroelectronics

NPN

SINGLE

NO

140 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

175 Cel

85 pF

SILICON

35 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

e4

SD1460

STMicroelectronics

NPN

SINGLE

NO

108 MHz

160 W

16 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

150 pF

SILICON

25 V

RADIAL

O-PRFM-F4

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

SD1437

STMicroelectronics

NPN

SINGLE

NO

19.4 W

.45 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

200 Cel

10 pF

SILICON

25 V

RADIAL

O-PRPM-F4

Not Qualified

HIGH EFFICIENCY

MSC81005

STMicroelectronics

NPN

SINGLE

NO

18.8 W

.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

POST/STUD MOUNT

Other Transistors

15

200 Cel

6.5 pF

SILICON

RADIAL

O-CRPM-F2

BASE

Not Qualified

MSC82306

STMicroelectronics

NPN

SINGLE

NO

16.7 W

.9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

7 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1439

STMicroelectronics

NPN

SINGLE

NO

8.75 W

.22 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

15

200 Cel

5 pF

SILICON

24 V

RADIAL

O-PRPM-F4

Not Qualified

HIGH EFFICIENCY

MSC81111

STMicroelectronics

NPN

SINGLE

NO

18.8 W

.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

6.5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1727(THX15)

STMicroelectronics

NPN

SINGLE

NO

10 A

PLASTIC/EPOXY

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

220 pF

SILICON

55 V

RADIAL

O-PRPM-F4

Not Qualified

SD1407

STMicroelectronics

NPN

SINGLE

NO

270 W

20 A

PLASTIC/EPOXY

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

36 V

NICKEL

RADIAL

O-PRFM-F4

Not Qualified

260

SD1893-03

STMicroelectronics

NPN

SINGLE

NO

43 W

4.4 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1457

STMicroelectronics

NPN

SINGLE

NO

108 MHz

100 W

10 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

175 Cel

85 pF

SILICON

30 V

NICKEL

RADIAL

O-PRFM-F4

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

MSC82003

STMicroelectronics

NPN

SINGLE

NO

21.8 W

.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

6.5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

MSC81035M

STMicroelectronics

NPN

SINGLE

NO

150 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

RADIAL

O-PRFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1449

STMicroelectronics

NPN

SINGLE

NO

19.4 W

.44 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

7 pF

SILICON

25 V

RADIAL

O-PRPM-F4

Not Qualified

HIGH EFFICIENCY

MJD13005-1

STMicroelectronics

NPN

SINGLE

NO

30 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

8

150 Cel

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-T3

Not Qualified

HIGH RELIABILITY, HIGH VOLTAGE

TO-251

e3

SD1224-02

STMicroelectronics

NPN

SINGLE

NO

175 MHz

60 W

5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

5

200 Cel

65 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

SD1731-14

STMicroelectronics

NPN

SINGLE

NO

257 W

20 A

PLASTIC/EPOXY

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

55 V

RADIAL

O-PRFM-F4

Not Qualified

SD1274-01

STMicroelectronics

NPN

SINGLE

NO

175 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MSC82010

STMicroelectronics

NPN

SINGLE

NO

35 W

1.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

19 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1446

STMicroelectronics

NPN

SINGLE

NO

12 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

BIP RF Small Signal

300 pF

SILICON

18 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD1274

STMicroelectronics

NPN

SINGLE

NO

175 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRPM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.