NO RF Power Bipolar Junction Transistors (BJT) 222

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

SD1730

STMicroelectronics

NPN

SINGLE

NO

320 W

16 A

PLASTIC/EPOXY

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-PRFM-F4

Not Qualified

SD1275-01

STMicroelectronics

NPN

SINGLE

NO

160 MHz

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD1275

STMicroelectronics

NPN

SINGLE

NO

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

SILICON

16 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

e4

SD1487

STMicroelectronics

NPN

SINGLE

NO

20 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

BIP RF Small Signal

200 Cel

SILICON

18 V

RADIAL

O-PRFM-F4

Not Qualified

WITH EMITTER BALLASTING RESISTORS

MSC82304

STMicroelectronics

NPN

SINGLE

NO

11.5 W

.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD4011

STMicroelectronics

NPN

SINGLE

NO

31.8 W

1.59 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

20 pF

SILICON

20 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

HIGH EFFICIENCY

e4

SD1731

STMicroelectronics

NPN

SINGLE

NO

233 W

20 A

PLASTIC/EPOXY

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

55 V

NICKEL

RADIAL

O-PRFM-F4

Not Qualified

SD1285

STMicroelectronics

NPN

SINGLE

NO

80 W

4.5 A

PLASTIC/EPOXY

FLAT

ROUND

1

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-PRFM-F4

Not Qualified

MSC81058

STMicroelectronics

NPN

SINGLE

NO

29 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

10 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1727

STMicroelectronics

NPN

SINGLE

NO

233 W

10 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

18

200 Cel

220 pF

SILICON

55 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

e4

MSC82005

STMicroelectronics

NPN

SINGLE

NO

29 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

10 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1405

STMicroelectronics

NPN

SINGLE

NO

20 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

BIP RF Small Signal

200 Cel

SILICON

18 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD1855

STMicroelectronics

NPN

SINGLE

NO

20.6 W

.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

25 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

SD1729

STMicroelectronics

NPN

SINGLE

NO

175 W

12 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

18

200 Cel

SILICON

35 V

NICKEL

RADIAL

O-PRFM-F4

Not Qualified

MSC83305

STMicroelectronics

NPN

SINGLE

NO

17.6 W

.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

7.5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1015

STMicroelectronics

NPN

SINGLE

NO

250 MHz

40 W

4 A

UNSPECIFIED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

5

175 Cel

50 pF

SILICON

35 V

RADIAL

O-XRPM-F4

SD1733

STMicroelectronics

NPN

SINGLE

NO

127 W

3.25 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

19

200 Cel

100 pF

SILICON

55 V

RADIAL

O-PRPM-F4

Not Qualified

MSC81010

STMicroelectronics

NPN

SINGLE

NO

29 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

POST/STUD MOUNT

Other Transistors

15

200 Cel

10 pF

SILICON

RADIAL

O-CRPM-F2

BASE

Not Qualified

MSC83303

STMicroelectronics

NPN

SINGLE

NO

10 W

.54 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

2N3733

STMicroelectronics

NPN

SINGLE

NO

23 W

1 A

1

Other Transistors

10

175 Cel

SD1224-10

STMicroelectronics

NPN

SINGLE

NO

80 W

4.5 A

PLASTIC/EPOXY

FLAT

ROUND

1

4

FLANGE MOUNT

Other Transistors

10

200 Cel

65 pF

SILICON

36 V

RADIAL

O-PRFM-F4

Not Qualified

HIGH RELIABILITY

MSC80197

STMicroelectronics

NPN

SINGLE

NO

3200 MHz

.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

7 pF

SILICON

20 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

MSC81020

STMicroelectronics

NPN

SINGLE

NO

35 W

1.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

POST/STUD MOUNT

Other Transistors

15

200 Cel

19 pF

SILICON

RADIAL

O-CRPM-F2

BASE

Not Qualified

SD1448

STMicroelectronics

NPN

SINGLE

NO

31.8 W

.85 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

200 Cel

20 pF

SILICON

25 V

RADIAL

O-PRPM-F4

Not Qualified

HIGH EFFICIENCY

SD1135

STMicroelectronics

NPN

SINGLE

NO

470 MHz

15 W

2 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

175 Cel

SILICON

16 V

RADIAL

O-PRPM-F4

Not Qualified

MSC1004M

STMicroelectronics

NPN

SINGLE

NO

18 W

.65 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

RADIAL

O-PRFM-F2

BASE

Not Qualified

HIGH RELIABILITY

SD1433

STMicroelectronics

NPN

SINGLE

NO

58 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

175 Cel

SILICON

16 V

GOLD

RADIAL

O-PRPM-F4

Not Qualified

e4

MSC82307

STMicroelectronics

NPN

SINGLE

NO

21.4 W

1.2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

30

200 Cel

8.5 pF

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

SD1459

STMicroelectronics

NPN

SINGLE

NO

150 W

16 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

20

200 Cel

150 pF

SILICON

30 V

RADIAL

O-PRPM-F4

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

MSC81325M

STMicroelectronics

NPN

SINGLE

NO

880 W

24 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

RADIAL

O-CRFM-F2

BASE

Not Qualified

HIGH RELIABILITY

BLW34

NXP Semiconductors

NPN

SINGLE

NO

3300 MHz

31 W

2.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

31 W

20

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

933448540112

NXP Semiconductors

NPN

SINGLE

NO

3400 MHz

1.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

SILICON

30 V

RADIAL

O-CRPM-F4

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLU15/12

NXP Semiconductors

NPN

SINGLE

NO

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

35 W

15

200 Cel

SILICON

16 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

BFQ234/1

NXP Semiconductors

NPN

SINGLE

NO

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

4

POST/STUD MOUNT

SILICON

RADIAL

O-CRPM-F4

Not Qualified

BLW60C

NXP Semiconductors

NPN

SINGLE

NO

600 MHz

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

160 pF

SILICON

16 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

BLX15

NXP Semiconductors

NPN

SINGLE

NO

275 MHz

6.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

FLAT

UNSPECIFIED

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

15

200 Cel

220 pF

SILICON

53 V

UNSPECIFIED

X-PXPM-F4

Not Qualified

LTE1015T

NXP Semiconductors

NPN

SINGLE

NO

.2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

BLX94C

NXP Semiconductors

NPN

SINGLE

NO

750 MHz

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

60 W

15

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

LCE2003S

NXP Semiconductors

NPN

SINGLE

NO

1.4 W

.03 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

4

POST/STUD MOUNT

Other Transistors

200 Cel

SILICON

RADIAL

O-CRPM-F4

Not Qualified

BLV11

NXP Semiconductors

NPN

SINGLE

NO

850 MHz

36 W

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLW30

NXP Semiconductors

NPN

SINGLE

NO

1600 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25

200 Cel

100 pF

SILICON

16 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

MTB10010U

NXP Semiconductors

NPN

SINGLE

NO

36 W

.75 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9.5 dB

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

BLY87C

NXP Semiconductors

NPN

SINGLE

NO

950 MHz

20 W

1.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

BLW98

NXP Semiconductors

NPN

SINGLE

NO

2500 MHz

21.5 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

21.5 W

15

200 Cel

30 pF

SILICON

27 V

RADIAL

O-CRPM-F4

1

ISOLATED

Not Qualified

HIGH RELIABILITY

BLW95

NXP Semiconductors

SINGLE

NO

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

4

FLANGE MOUNT

200 Cel

SILICON

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLV13

NXP Semiconductors

NPN

SINGLE

NO

1650 MHz

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

15

200 Cel

SILICON

16.5 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLW33

NXP Semiconductors

NPN

SINGLE

NO

3400 MHz

19.3 W

1.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

19.3 W

20

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLU99

NXP Semiconductors

NPN

SINGLE

NO

4000 MHz

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10.5 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

12.5 W

25

200 Cel

SILICON

16 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.