NO RF Power Bipolar Junction Transistors (BJT) 222

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

PTC4001T

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

SILICON

16 V

RADIAL

O-CRFM-F2

COLLECTOR

Not Qualified

DIFFUSED EMITTER BALLAST RESISTOR

BLY88C

NXP Semiconductors

NPN

SINGLE

NO

800 MHz

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

SILICON

18 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

BLW50F

NXP Semiconductors

NPN

SINGLE

NO

540 MHz

94 W

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

94 W

15

200 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLY89C

NXP Semiconductors

NPN

SINGLE

NO

750 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

90 pF

SILICON

18 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

PTB32003X

NXP Semiconductors

NPN

SINGLE

NO

7.6 W

.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BFQ292

NXP Semiconductors

PNP

SINGLE

NO

400 MHz

.25 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

175 Cel

SILICON

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

TO-126

PTB23006U

NXP Semiconductors

NPN

SINGLE

NO

11 W

.75 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

Other Transistors

11 W

15

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

BFQ270

NXP Semiconductors

NPN

SINGLE

NO

6000 MHz

.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

C BAND

4

POST/STUD MOUNT

10 W

60

200 Cel

SILICON

19 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

BLW83

NXP Semiconductors

NPN

SINGLE

NO

530 MHz

76 W

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

36 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLV80/28

NXP Semiconductors

NPN

SINGLE

NO

600 MHz

8.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

116 W

15

200 Cel

SILICON

33 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLY88A

NXP Semiconductors

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

7.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

200 Cel

SILICON

18 V

RADIAL

O-PRPM-F4

ISOLATED

Not Qualified

2N3375

NXP Semiconductors

NPN

SINGLE

NO

500 MHz

.5 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

POST/STUD MOUNT

11.6 W

200 Cel

SILICON

40 V

UPPER

O-MUPM-P3

ISOLATED

Not Qualified

TO-60

BFQ293

NXP Semiconductors

NPN

SINGLE

NO

400 MHz

.25 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

175 Cel

SILICON

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

TO-126

MRF6409

NXP Semiconductors

NPN

SINGLE

NO

5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

20

200 Cel

SILICON

24 V

DUAL

R-CDFM-F6

BLX96

NXP Semiconductors

NPN

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

SILICON

RADIAL

O-PRPM-F4

Not Qualified

BLW81

NXP Semiconductors

NPN

SINGLE

NO

900 MHz

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

10

200 Cel

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

PTB32005X

NXP Semiconductors

NPN

SINGLE

NO

8.7 W

.75 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

LTE21025R

NXP Semiconductors

NPN

SINGLE

NO

8 W

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

8 W

15

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

LTE42005STRAY

NXP Semiconductors

NPN

SINGLE

NO

.11 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.2 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LTE42008R

NXP Semiconductors

NPN

SINGLE

NO

.45 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

7.5 W

15

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

LTE42012R

NXP Semiconductors

NPN

SINGLE

NO

8 W

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

8 W

15

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

LTE21015R

NXP Semiconductors

NPN

SINGLE

NO

.45 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

7.5 W

15

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

LTE21025RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.8 dB

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LTE42012RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LTE42005S

NXP Semiconductors

NPN

SINGLE

NO

4 W

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F2

EMITTER

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

LTE42008RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LTE21015RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.1 dB

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

BLW76

NXP Semiconductors

NPN

SINGLE

NO

315 MHz

140 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLW79

NXP Semiconductors

NPN

SINGLE

NO

1000 MHz

.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

8.5 W

10

200 Cel

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

BLW78

NXP Semiconductors

NPN

SINGLE

NO

350 MHz

160 W

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BFT98

Infineon Technologies

NPN

SINGLE

NO

3300 MHz

2.2 W

.2 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

POST/STUD MOUNT

Other Transistors

175 Cel

SILICON

20 V

RADIAL

O-CRPM-F4

Not Qualified

BFT99

Infineon Technologies

NPN

SINGLE

NO

3300 MHz

4 W

.35 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

POST/STUD MOUNT

Other Transistors

175 Cel

SILICON

20 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2104

Toshiba

NPN

SINGLE

NO

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

20 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2395

Toshiba

NPN

SINGLE

NO

200 MHz

40 W

5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

17 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

40 W

20

175 Cel

150 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2318

Toshiba

NPN

SINGLE

NO

2700 MHz

.35 A

METAL

AMPLIFIER

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

CYLINDRICAL

3.5 pF

SILICON

15 V

TIN LEAD

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-33

e0

2SC4479

Toshiba

NPN

SINGLE

NO

1100 MHz

1.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10 W

20

150 Cel

5 pF

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC2391

Toshiba

NPN

SINGLE

NO

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

20 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2118

Toshiba

NPN

SINGLE

NO

1.4 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

25 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBFM-P3

EMITTER

Not Qualified

e0

2SC2105

Toshiba

NPN

SINGLE

NO

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

25 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2380

Toshiba

NPN

SINGLE

NO

2.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

45 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC4605

Toshiba

NPN

SINGLE

NO

1100 MHz

2 W

.5 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10 W

20

150 Cel

5.2 pF

SILICON

100 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

e0

2SC1955

Toshiba

NPN

SINGLE

NO

.8 A

METAL

AMPLIFIER

WIRE

ROUND

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

15 pF

SILICON

17 V

TIN LEAD

BOTTOM

O-MBCY-W3

EMITTER

Not Qualified

e0

2SC3613

Toshiba

NPN

SINGLE

NO

3500 MHz

1.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5 W

20

150 Cel

5 pF

SILICON

18 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

2SC4201

Toshiba

NPN

SINGLE

NO

1100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

100 V

SINGLE

R-PSFM-T3

BASE

Not Qualified

TO-220AB

2SC2381

Toshiba

NPN

SINGLE

NO

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

80 pF

SILICON

17 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

2SC2106

Toshiba

NPN

SINGLE

NO

2.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

45 pF

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

2SC2098

Toshiba

NPN

SINGLE

NO

100 MHz

6 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

FLANGE MOUNT

120 pF

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2SC4202

Toshiba

NPN

SINGLE

NO

1100 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5 pF

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.