NXP Semiconductors - LTE42008R

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LTE42008R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LTE42008R
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .45 A; Maximum Power Dissipation Ambient: 7.5 W; Highest Frequency Band: C BAND;
Datasheet LTE42008R Datasheet
In Stock1,011
NAME DESCRIPTION
Minimum Power Gain (Gp): 7 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .45 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: C BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
Maximum Power Dissipation Ambient: 7.5 W
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