Microchip Technology RF Power Field Effect Transistors (FET) 4
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- RF Power Field Effect Transistors (FET)
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Microchip Technology
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Ampleon Netherlands B V
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Broadcom
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Freescale Semiconductor
-
Fujitsu
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Gan Systems
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IXYS Corporation
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Infineon Technologies
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Littelfuse
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M/a-com Technology Solutions
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Mitsubishi Electric
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Motorola
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NXP Semiconductors
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Onsemi
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Qorvo
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Renesas Electronics
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STMicroelectronics
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Samsung
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Sumitomo Electric Industries
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TE Connectivity
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Texas Instruments
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Toshiba
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Tt Electronics Plc
-
Wolfspeed
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N-CHANNEL
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P-CHANNEL
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COMMON SOURCE, 2 ELEMENTS
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COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
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COMMON SOURCE, 3 ELEMENTS
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COMPLEX
-
SEPARATE, 2 ELEMENTS
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SINGLE
-
SINGLE WITH BUILT-IN DIODE
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NO
-
YES
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.079 W
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.4 W
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.795 W
-
1.6 W
-
10 W
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100 W
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105 W
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1052 W
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108 W
-
11.7 W
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110 W
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115 W
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116 W
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117 W
-
118 W
-
12.5 W
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120 W
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125 W
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130 W
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1300 W
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1333 W
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135 W
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139 W
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14 W
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140 W
-
145 W
-
146 W
-
151 W
-
152 W
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158 W
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159 W
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16 W
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160 W
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161 W
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165 W
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1670 W
-
17.8 W
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170 W
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173 W
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175 W
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177 W
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18.8 W
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180 W
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182 W
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184 W
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186 W
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19 W
-
19.5 W
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190 W
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196 W
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197 W
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2.5 W
-
20 W
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20.5 W
-
20.8 W
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200 W
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211 W
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216 W
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217 W
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218.8 W
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219 W
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220 W
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223 W
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224 W
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227 W
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230 W
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236 W
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25 W
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250 W
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252 W
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26.6 W
-
26.7 W
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261 W
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265 W
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266 W
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269 W
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270 W
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273 W
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278 W
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289 W
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29 W
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290 W
-
292 W
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294 W
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298 W
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3 W
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3.1 W
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300 W
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302 W
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307 W
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31 W
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31.2 W
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31.7 W
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31.8 W
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315 W
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317 W
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318 W
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324 W
-
330 W
-
335 W
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336 W
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343 W
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35 W
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350 W
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357 W
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36.5 W
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372 W
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38 W
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38.9 W
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380 W
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388 W
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389 W
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39 W
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398 W
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4 W
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40 W
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407 W
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417 W
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427 W
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43.75 W
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437 W
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437.5 W
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438 W
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44 W
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448 W
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449 W
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45 W
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473 W
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476 W
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48 W
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486 W
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498 W
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5 W
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500 W
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52.8 W
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530 W
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565 W
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58 W
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59 W
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6 W
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603 W
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61.4 W
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62.5 W
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625 W
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643 W
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647 W
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648 W
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65 W
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68 W
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690 W
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7 W
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700 W
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73 W
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74 W
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75 W
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761 W
-
79 W
-
79.5 W
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795 W
-
8.3 W
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800 W
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83.3 W
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86 W
-
87.5 W
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9 W
-
92 W
-
93 W
-
95 W
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CERAMIC, METAL-SEALED COFIRED
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METAL
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PLASTIC/EPOXY
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UNSPECIFIED
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AMPLIFIER
-
SWITCHING
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10 V
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100 V
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1000 V
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104 V
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105 V
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106 V
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108 V
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110 V
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112 V
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115 V
-
12 V
-
120 V
-
1200 V
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125 V
-
130 V
-
133 V
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14 V
-
15 V
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150 V
-
16 V
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160 V
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17 V
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170 V
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177 V
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179 V
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19 V
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20 V
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200 V
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25 V
-
250 V
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28 V
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3.8 V
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30 V
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36 V
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4.2 V
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40 V
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5.5 V
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50 V
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500 V
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6 V
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60 V
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65 V
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650 V
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66 V
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68 V
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7 V
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70 V
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75 V
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8 V
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80 V
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84 V
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89 V
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9 V
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90 V
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10 dB
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10.5 dB
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10.75 dB
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11 dB
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11.3 dB
-
11.5 dB
-
12 dB
-
12.5 dB
-
12.7 dB
-
12.9 dB
-
13 dB
-
13.3 dB
-
13.5 dB
-
14 dB
-
14.1 dB
-
14.2 dB
-
14.3 dB
-
14.5 dB
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14.75 dB
-
14.9 dB
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15 dB
-
15.5 dB
-
15.55 dB
-
15.75 dB
-
16 dB
-
16.2 dB
-
16.5 dB
-
16.7 dB
-
17 dB
-
17.4 dB
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17.5 dB
-
17.6 dB
-
18 dB
-
18.5 dB
-
18.9 dB
-
19 dB
-
19.5 dB
-
20 dB
-
20.5 dB
-
21 dB
-
23 dB
-
23.5 dB
-
24 dB
-
24.5 dB
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26.8 dB
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5.5 dB
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7.5 dB
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8.5 dB
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9 dB
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9.5 dB
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C BEND
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FLAT
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GULL WING
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NO LEAD
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THROUGH-HOLE
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UNSPECIFIED
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WIRE
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RECTANGULAR
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ROUND
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SQUARE
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UNSPECIFIED
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DEPLETION MODE
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DUAL GATE, DEPLETION MODE
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ENHANCEMENT MODE
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1
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2
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3
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C BAND
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HIGH FREQUENCY BAND
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K BAND
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KA BAND
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KU BAND
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L BAND
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S BAND
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ULTRA HIGH FREQUENCY BAND
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VERY HIGH FREQUENCY BAND
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X BAND
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72 A
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.00001 A
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.2 A
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.25 A
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.3 A
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.35 A
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.4 A
-
.5 A
-
.6 A
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.7 A
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.75 A
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.83 A
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1 A
-
1.1 A
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1.2 A
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1.25 A
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1.5 A
-
1.65 A
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1.8 A
-
10 A
-
10.4 A
-
11 A
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11.4 A
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11.5 A
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112 A
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12 A
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13 A
-
14 A
-
15 A
-
16 A
-
16.5 A
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17 A
-
18 A
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2 A
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2.1 A
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2.2 A
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2.3 A
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2.5 A
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2.6 A
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2.8 A
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20 A
-
22 A
-
24 A
-
25 A
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26 A
-
27 A
-
29 A
-
3 A
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3.1 A
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3.5 A
-
3.9 A
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30 A
-
31 A
-
32 A
-
33 A
-
34 A
-
38 A
-
39 A
-
4 A
-
4.2 A
-
4.25 A
-
4.5 A
-
40 A
-
42 A
-
46 A
-
49 A
-
5 A
-
5.2 A
-
5.6 A
-
5.7 A
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54 A
-
6 A
-
6.2 A
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6.5 A
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60 A
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64 A
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7 A
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7.2 A
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76 A
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8 A
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8.2 A
-
8.5 A
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9 A
-
10
-
12
-
13
-
14
-
16
-
2
-
24
-
3
-
4
-
5
-
6
-
7
-
8
-
9
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CHIP CARRIER
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CYLINDRICAL
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DIE
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DISK BUTTON
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FLANGE MOUNT
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FLATPACK
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IN-LINE
-
MICROWAVE
-
SMALL OUTLINE
-
UNCASED CHIP
-
FET General Purpose Power
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FET General Purpose Powers
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FET RF Small Signal
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FET RF Small Signals
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Other Transistors
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HETERO-JUNCTION
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HIGH ELECTRON MOBILITY
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JUNCTION
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METAL SEMICONDUCTOR
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METAL-OXIDE SEMICONDUCTOR
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1.5 W
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10 W
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10.5 W
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100 W
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110 W
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115 W
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115.4 W
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117 W
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118 W
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12 W
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120 W
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125 W
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13 W
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130 W
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136 W
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140 W
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145 W
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15 W
-
150 W
-
16 W
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162.5 W
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165 W
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175 W
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18 W
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185 W
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187 W
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187.5 W
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2.5 W
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20 W
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21.4 W
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215 W
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22 W
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22.7 W
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220 W
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225 W
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23 W
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23.1 W
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25 W
-
250 W
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270 W
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28.3 W
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280 W
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3 W
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3.3 W
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30 W
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300 W
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32.5 W
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33 W
-
330 W
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37.5 W
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38 W
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39.5 W
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4 W
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40.5 W
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42.8 W
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42.9 W
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48 W
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5 W
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50 W
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500 W
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60 W
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62.5 W
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68 W
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7.5 W
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70 W
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75 W
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83.3 W
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85 W
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87.5 W
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92 W
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100 Cel
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105 Cel
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125 Cel
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150 Cel
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165 Cel
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175 Cel
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180 Cel
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200 Cel
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225 Cel
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250 Cel
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85 Cel
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90 Cel
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GALLIUM ARSENIDE
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GALLIUM NITRIDE
-
SILICON
-
SILICON CARBIDE
-
-20 Cel
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-40 Cel
-
-55 Cel
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GOLD
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GOLD (10)
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GOLD NICKEL
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GOLD OVER NICKEL
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Gold (Au)
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Gold (Au) - with Nickel (Ni) barrier
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Gold/Nickel (Au/Ni)
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MATTE TIN
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Matte Tin (Sn)
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Matte Tin (Sn) - annealed
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NICKEL GOLD
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NICKEL PALLADIUM GOLD
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Nickel/Gold (Ni/Au)
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Nickel/Gold/Cobalt (Ni/Au/Co)
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Nickel/Palladium/Gold (Ni/Pd/Au)
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SILVER
-
TIN
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TIN BISMUTH
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TIN LEAD
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TIN SILVER COPPER
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Tin (Sn)
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Tin/Lead (Sn/Pb)
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.112 ohm
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.15 ohm
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.3 ohm
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.35 ohm
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.5 ohm
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.6 ohm
-
.75 ohm
-
1.05 ohm
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1.25 ohm
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1.5 ohm
-
2.5 ohm
-
2.7 ohm
-
5 ohm
-
.00001 A
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.2 A
-
.25 A
-
.3 A
-
.35 A
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.4 A
-
.5 A
-
.6 A
-
.7 A
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.75 A
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.8 A
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.9 A
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.95 A
-
1 A
-
1.1 A
-
1.2 A
-
1.25 A
-
1.5 A
-
1.65 A
-
1.8 A
-
10 A
-
10.2 A
-
10.4 A
-
11 A
-
11.4 A
-
11.5 A
-
112 A
-
12 A
-
13 A
-
13.9 A
-
14 A
-
15 A
-
15.5 A
-
16 A
-
16.5 A
-
17 A
-
18 A
-
2 A
-
2.1 A
-
2.2 A
-
2.3 A
-
2.4 A
-
2.5 A
-
2.6 A
-
2.8 A
-
20 A
-
22 A
-
24 A
-
25 A
-
26 A
-
27 A
-
27.8 A
-
28 A
-
29 A
-
3 A
-
3.1 A
-
3.3 A
-
3.5 A
-
3.6 A
-
3.9 A
-
30 A
-
31 A
-
32 A
-
32.5 A
-
33 A
-
34 A
-
35 A
-
36 A
-
37 A
-
38 A
-
39 A
-
4 A
-
4.2 A
-
4.25 A
-
4.5 A
-
40 A
-
42 A
-
45 A
-
46 A
-
48 A
-
49 A
-
5 A
-
5.2 A
-
5.6 A
-
5.7 A
-
54 A
-
56 A
-
6 A
-
6.2 A
-
6.3 A
-
6.5 A
-
60 A
-
64 A
-
7 A
-
7.2 A
-
7.5 A
-
72 A
-
76 A
-
8 A
-
8.2 A
-
8.5 A
-
8.7 A
-
88 A
-
9 A
-
90 A
-
BOTTOM
-
DUAL
-
QUAD
-
RADIAL
-
SINGLE
-
UNSPECIFIED
-
UPPER
-
DIE-2
-
DIE-6
-
O-CRFM-F4
-
O-CXDB-F6
-
O-CXFM-F6
-
O-MBCY-W3
-
O-PRFM-F4
-
R-CDFM-F2
-
R-CDFM-F3
-
R-CDFM-F4
-
R-CDFM-F5
-
R-CDFM-F6
-
R-CDFM-F8
-
R-CDFM-G2
-
R-CDFM-G4
-
R-CDFP-F2
-
R-CDFP-F3
-
R-CDFP-F4
-
R-CDFP-F6
-
R-CDFP-F8
-
R-CDFP-X6
-
R-CDSO-F2
-
R-CDSO-G2
-
R-CDSO-G4
-
R-CDSO-G8
-
R-CDSO-N2
-
R-CQFM-F6
-
R-CQFM-F8
-
R-CQFM-X6
-
R-CQFP-F6
-
R-CQFP-F8
-
R-CQFP-X2
-
R-CQFP-X4
-
R-CQFP-X6
-
R-CQMW-F4
-
R-CQSO-X4
-
R-CQSO-X6
-
R-MDFM-F4
-
R-MDSO-G8
-
R-PBCC-N3
-
R-PBCC-N4
-
R-PDFM-C6
-
R-PDFM-C8
-
R-PDFM-F12
-
R-PDFM-F16
-
R-PDFM-F2
-
R-PDFM-F3
-
R-PDFM-F4
-
R-PDFM-F6
-
R-PDFM-F8
-
R-PDFM-G16
-
R-PDFM-G2
-
R-PDFM-G4
-
R-PDFP-F2
-
R-PDFP-F4
-
R-PDFP-F6
-
R-PDFP-F8
-
R-PDSO-F16
-
R-PDSO-F2
-
R-PDSO-F4
-
R-PDSO-F6
-
R-PDSO-F8
-
R-PDSO-G10
-
R-PDSO-G16
-
R-PDSO-G2
-
R-PDSO-G3
-
R-PDSO-G4
-
R-PDSO-G8
-
R-PDSO-N10
-
R-PDSO-N12
-
R-PDSO-N16
-
R-PDSO-N6
-
R-PDSO-N8
-
R-PQCC-N4
-
R-PQFP-F4
-
R-PQFP-F6
-
R-PQFP-X4
-
R-PQMW-F4
-
R-PQSO-F3
-
R-PQSO-F4
-
R-PQSO-N4
-
R-PSFM-T3
-
R-PSIP-T3
-
R-PSSO-F3
-
R-PSSO-F4
-
R-XBCC-N4
-
R-XBCC-N6
-
R-XDFM-F2
-
R-XDFM-F4
-
R-XDFP-F2
-
R-XDFP-F4
-
R-XDSO-G8
-
R-XQFP-F4
-
R-XQMW-F
-
R-XQMW-F4
-
R-XQSO-F4
-
R-XUUC-N
-
R-XUUC-N13
-
R-XUUC-N14
-
R-XUUC-N2
-
R-XUUC-N3
-
R-XUUC-N4
-
R-XUUC-N5
-
R-XUUC-N6
-
R-XUUC-N7
-
R-XUUC-N9
-
R-XXUC-N
-
S-CDFM-F2
-
S-CDFM-F4
-
S-CDFP-F2
-
S-CDSO-G2
-
S-CQCC-N12
-
S-CQCC-N16
-
S-CQFM-F6
-
S-CQFP-F6
-
S-CQMW-F4
-
S-PBCC-N24
-
S-PDSO-N10
-
S-PDSO-N2
-
S-PDSO-N3
-
S-PDSO-N6
-
S-PDSO-N8
-
S-PQCC-N12
-
S-PQCC-N5
-
S-PQSO-N4
-
S-XBCC-N3
-
S-XDSO-G2
-
S-XDSO-N2
-
S-XQCC-N16
-
X-CXMW-F4
-
1
-
2
-
3
-
6
-
NOT APPLICABLE
-
DRAIN
-
ISOLATED
-
SOURCE
-
Not Qualified
-
AVALANCHE RATED
-
ESD PROTECTED
-
ESD PROTECTED, HIGH RELIABILITY
-
ESD PROTECTION
-
ESD PROTECTION, HIGH RELIABILITY
-
HGH RELIABILITY
-
HIGH EFFICIENCY
-
HIGH RELIABILITY
-
LOW NOISE
-
LOW NOISE, HIGH RELIABILITY
-
MO-229
-
TO-247AD
-
TO-270
-
TO-270AA
-
TO-270BA
-
TO-270BB
-
TO-272
-
TO-272AA
-
TO-272BA
-
TO-39
-
e0
-
e1
-
e3
-
e4
-
e6
-
10
-
20
-
30
-
40
-
NOT APPLICABLE
-
NOT SPECIFIED
-
225
-
240
-
245
-
250
-
255
-
260
-
270
-
280
-
NOT APPLICABLE
-
NOT SPECIFIED
-
.13 pF
-
.15 pF
-
.186 pF
-
.2 pF
-
.26 pF
-
.3 pF
-
.4 pF
-
.46 pF
-
.53 pF
-
.6 pF
-
.7 pF
-
1 pF
-
1.04 pF
-
1.1 pF
-
1.16 pF
-
1.6 pF
-
10 pF
-
2 pF
-
2.43 pF
-
2.5 pF
-
2.8 pF
-
2.98 pF
-
21 pF
-
24 pF
-
25 pF
-
3 pF
-
3.3 pF
-
35 pF
-
40 pF
-
5.2 pF
-
65 pF
-
8 pF
-
ESA-SCC-5614/008
-
IEC-60134
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Package Body Material | Transistor Application | Minimum DS Breakdown Voltage | Minimum Power Gain (Gp) | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Minimum Operating Temperature | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
N-CHANNEL |
SINGLE |
NO |
180 W |
PLASTIC/EPOXY |
AMPLIFIER |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
9 A |
SINGLE |
R-PSFM-T3 |
1 |
SOURCE |
Not Qualified |
TO-247AD |
e1 |
|||||||||||
|
|
Microchip Technology |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS |
YES |
500 W |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
170 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
VERY HIGH FREQUENCY BAND |
40 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
TIN SILVER COPPER |
36 A |
DUAL |
R-CDFM-F4 |
1 |
SOURCE |
Not Qualified |
e1 |
||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE |
YES |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
170 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
60 A |
2 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
TIN SILVER COPPER |
60 A |
DUAL |
R-CDFM-F2 |
SOURCE |
Not Qualified |
e1 |
NOT SPECIFIED |
NOT SPECIFIED |
65 pF |
||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE |
YES |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
170 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
60 A |
2 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
60 A |
DUAL |
R-CDFM-F2 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
65 pF |
RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.
RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.
The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.